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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP60R099C7XKSA1

IPP60R099C7XKSA1

MOSFET N-CH 600V 22A TO220-3

Infineon Technologies

4,181 -
IPP60R099C7XKSA1

数据表

CoolMOS™ C7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 99mOhm @ 9.7A, 10V Through Hole 4V @ 490µA 42 nC @ 10 V 600 V ±20V 1819 pF @ 400 V - - PG-TO220-3-1 - 110W (Tc) -55°C ~ 150°C (TJ)
IPD60R280P7ATMA1

IPD60R280P7ATMA1

MOSFET N-CH 600V 12A TO252-3

Infineon Technologies

7,956 -
IPD60R280P7ATMA1

数据表

CoolMOS™ P7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 280mOhm @ 3.8A, 10V Surface Mount 4V @ 190µA 18 nC @ 10 V 600 V ±20V 761 pF @ 400 V - - PG-TO252-3 - 53W (Tc) -55°C ~ 150°C (TJ)
IRF8788PBF

IRF8788PBF

MOSFET N-CH 30V 24A 8SO

Infineon Technologies

8,744 -
IRF8788PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 24A (Ta) 4.5V, 10V 2.8mOhm @ 24A, 10V Surface Mount 2.35V @ 100µA 66 nC @ 4.5 V 30 V ±20V 5720 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFR1018ETRRPBF

IRFR1018ETRRPBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies

4,705 -
IRFR1018ETRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 8.4mOhm @ 47A, 10V Surface Mount 4V @ 100µA 69 nC @ 10 V 60 V ±20V 2290 pF @ 50 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
IRFR3410TRRPBF

IRFR3410TRRPBF

MOSFET N-CH 100V 31A DPAK

Infineon Technologies

3,293 -
IRFR3410TRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 39mOhm @ 18A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 100 V ±20V 1690 pF @ 25 V - - TO-252AA (DPAK) - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ)
IRFS4010TRRPBF

IRFS4010TRRPBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies

8,352 -
IRFS4010TRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 4.7mOhm @ 106A, 10V Surface Mount 4V @ 250µA 215 nC @ 10 V 100 V ±20V 9575 pF @ 50 V - - D2PAK - 375W (Tc) -55°C ~ 175°C (TJ)
IRLR8726PBF

IRLR8726PBF

MOSFET N-CH 30V 86A DPAK

Infineon Technologies

5,878 -
IRLR8726PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V Surface Mount 2.35V @ 50µA 23 nC @ 4.5 V 30 V ±20V 2150 pF @ 15 V - - TO-252AA (DPAK) - 75W (Tc) -55°C ~ 175°C (TJ)
IRLR8729PBF

IRLR8729PBF

MOSFET N-CH 30V 58A D-PAK

Infineon Technologies

2,336 -
IRLR8729PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V Surface Mount 2.35V @ 25µA 16 nC @ 4.5 V 30 V ±20V 1350 pF @ 15 V - - TO-252AA (DPAK) - 55W (Tc) -55°C ~ 175°C (TJ)
IRLR8729TRLPBF

IRLR8729TRLPBF

MOSFET N-CH 30V 58A D-PAK

Infineon Technologies

8,048 -
IRLR8729TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V Surface Mount 2.35V @ 25µA 16 nC @ 4.5 V 30 V ±20V 1350 pF @ 15 V - - TO-252AA (DPAK) - 55W (Tc) -55°C ~ 175°C (TJ)
IRLS3036TRRPBF

IRLS3036TRRPBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies

7,233 -
IRLS3036TRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V Surface Mount 2.5V @ 250µA 140 nC @ 4.5 V 60 V ±16V 11210 pF @ 50 V - - D2PAK - 380W (Tc) -55°C ~ 175°C (TJ)
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