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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPD052N10NF2SATMA1

IPD052N10NF2SATMA1

MOSFET

Infineon Technologies

8,997 -
IPD052N10NF2SATMA1

数据表

StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 118A (Tc) 6V, 10V 5.2mOhm @ 70A, 10V Surface Mount 3.8V @ 84µA 76 nC @ 10 V 100 V ±20V 3600 pF @ 50 V - - PG-TO252-3 - 3W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
IRF6633ATRPBF

IRF6633ATRPBF

MOSFET N-CH 20V 16A DIRECTFET

Infineon Technologies

8,571 -
IRF6633ATRPBF

数据表

HEXFET® DirectFET™ Isometric MU Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 69A (Tc) 4.5V, 10V 5.6mOhm @ 16A, 10V Surface Mount 2.2V @ 250µA 17 nC @ 4.5 V 20 V ±20V 1410 pF @ 10 V - - DIRECTFET™ MU - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6711STRPBF

IRF6711STRPBF

MOSFET N-CH 25V 19A DIRECTFET

Infineon Technologies

4,467 -
IRF6711STRPBF

数据表

HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 84A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V Surface Mount 2.35V @ 25µA 20 nC @ 4.5 V 25 V ±20V 1810 pF @ 13 V - - DIRECTFET™ SQ - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6713STRPBF

IRF6713STRPBF

MOSFET N-CH 25V 22A DIRECTFET

Infineon Technologies

2,621 -
IRF6713STRPBF

数据表

HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta), 95A (Tc) 4.5V, 10V 3mOhm @ 22A, 10V Surface Mount 2.4V @ 50µA 32 nC @ 4.5 V 25 V ±20V 2880 pF @ 13 V - - DIRECTFET™ SQ - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6797MTRPBF

IRF6797MTRPBF

MOSFET N-CH 25V 36A DIRECTFET

Infineon Technologies

5,705 -
IRF6797MTRPBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V Surface Mount 2.35V @ 150µA 68 nC @ 4.5 V 25 V ±20V 5790 pF @ 13 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6798MTRPBF

IRF6798MTRPBF

MOSFET N-CH 25V 37A DIRECTFET

Infineon Technologies

2,661 -
IRF6798MTRPBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 37A (Ta), 197A (Tc) 4.5V, 10V 1.3mOhm @ 37A, 10V Surface Mount 2.35V @ 150µA 75 nC @ 4.5 V 25 V ±20V 6560 pF @ 13 V - Schottky Diode (Body) DIRECTFET™ MX - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ)
62-0203PBF

62-0203PBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies

2,194 -
62-0203PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V Surface Mount 900mV @ 250µA 91 nC @ 4.5 V 12 V ±8V 8676 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF8113GPBF

IRF8113GPBF

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies

8,984 -
IRF8113GPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V Surface Mount 2.2V @ 250µA 36 nC @ 4.5 V 30 V ±20V 2910 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF8252PBF

IRF8252PBF

MOSFET N-CH 25V 25A 8SO

Infineon Technologies

4,339 -
IRF8252PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V Surface Mount 2.35V @ 100µA 53 nC @ 4.5 V 25 V ±20V 5305 pF @ 13 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPW65R145CFD7AXKSA1

IPW65R145CFD7AXKSA1

MOSFET N-CH 650V 17A TO247-3

Infineon Technologies

7,958 -
IPW65R145CFD7AXKSA1

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) - 145mOhm @ 8.5A, 10V Through Hole 4.5V @ 420µA 36 nC @ 10 V 650 V ±20V 1694 pF @ 400 V AEC-Q101 - PG-TO247-3 Automotive 98W (Tc) -40°C ~ 150°C (TJ)
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