富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF9335PBF

IRF9335PBF

MOSFET P-CH 30V 5.4A 8SO

Infineon Technologies

5,691 -
IRF9335PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 5.4A (Ta) 4.5V, 10V 59mOhm @ 5.4A, 10V Surface Mount 2.4V @ 10µA 14 nC @ 10 V 30 V ±20V 386 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF9388PBF

IRF9388PBF

MOSFET P-CH 30V 12A 8SO

Infineon Technologies

4,527 -
IRF9388PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 12A (Ta) 10V, 20V 8.5mOhm @ 12A, 20V Surface Mount 2.4V @ 25µA 52 nC @ 10 V 30 V ±25V 1680 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF9393PBF

IRF9393PBF

MOSFET P-CH 30V 9.2A 8SO

Infineon Technologies

3,559 -
IRF9393PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 9.2A (Ta) 10V, 20V 13.3mOhm @ 9.2A, 20V Surface Mount 2.4V @ 25µA 38 nC @ 10 V 30 V ±25V 1110 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFH5106TRPBF

IRFH5106TRPBF

MOSFET N-CH 60V 21A/100A 8PQFN

Infineon Technologies

2,218 -
IRFH5106TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta), 100A (Tc) 10V 5.6mOhm @ 50A, 10V Surface Mount 4V @ 250µA 75 nC @ 10 V 60 V ±20V 3090 pF @ 25 V - - 8-PQFN (5x6) - 3.6W (Ta), 114W (Tc) -55°C ~ 150°C (TJ)
IRFH5110TRPBF

IRFH5110TRPBF

MOSFET N-CH 100V 11A/63A 8PQFN

Infineon Technologies

6,412 -
IRFH5110TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 63A (Tc) 10V 12.4mOhm @ 37A, 10V Surface Mount 4V @ 100µA 72 nC @ 10 V 100 V ±20V 3152 pF @ 25 V - - 8-PQFN (5x6) - 3.6W (Ta), 114W (Tc) -55°C ~ 150°C (TJ)
IRFH5207TRPBF

IRFH5207TRPBF

MOSFET N-CH 75V 13A/71A 8PQFN

Infineon Technologies

7,408 -
IRFH5207TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 71A (Tc) 10V 9.6mOhm @ 43A, 10V Surface Mount 4V @ 100µA 59 nC @ 10 V 75 V ±20V 2474 pF @ 25 V - - 8-PQFN (5x6) - 3.6W (Ta), 105W (Tc) -55°C ~ 150°C (TJ)
IRFH5303TRPBF

IRFH5303TRPBF

MOSFET N-CH 30V 23A/82A 8PQFN

Infineon Technologies

7,804 -
IRFH5303TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta), 82A (Tc) 4.5V, 10V 4.2mOhm @ 49A, 10V Surface Mount 2.35V @ 50µA 41 nC @ 10 V 30 V ±20V 2190 pF @ 15 V - - 8-PQFN (5x6) - 3.6W (Ta), 46W (Tc) -55°C ~ 150°C (TJ)
IRLH5036TRPBF

IRLH5036TRPBF

MOSFET N-CH 60V 20A/100A 8PQFN

Infineon Technologies

6,797 -
IRLH5036TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta), 100A (Tc) 4.5V, 10V 4.4mOhm @ 50A, 10V Surface Mount 2.5V @ 150µA 90 nC @ 10 V 60 V ±16V 5360 pF @ 25 V - - 8-PQFN (5x6) - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ)
IPW65R190CFD7AXKSA1

IPW65R190CFD7AXKSA1

MOSFET N-CH 650V 14A TO247-3

Infineon Technologies

7,105 -
IPW65R190CFD7AXKSA1

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) - 190mOhm @ 6.4A, 10V Through Hole 4.5V @ 320µA 28 nC @ 10 V 650 V ±20V 1291 pF @ 400 V AEC-Q101 - PG-TO247-3 Automotive 77W (Tc) -40°C ~ 150°C (TJ)
IPW60R120P7XKSA1

IPW60R120P7XKSA1

MOSFET N-CH 600V 26A TO247-3

Infineon Technologies

6,054 -
IPW60R120P7XKSA1

数据表

CoolMOS™ P7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 120mOhm @ 8.2A, 10V Through Hole 4V @ 410µA 36 nC @ 10 V 600 V ±20V 1544 pF @ 400 V - - PG-TO247-3 - 95W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户