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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFSL4229PBFMOSFET N-CH 250V 45A TO262 Infineon Technologies |
7,108 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 10V | 48mOhm @ 26A, 10V | Through Hole | 5V @ 250µA | 110 nC @ 10 V | 250 V | ±30V | 4560 pF @ 25 V | - | - | TO-262 | - | 330W (Tc) | -40°C ~ 175°C (TJ) |
|
IRLB3036GPBFMOSFET N-CH 60V 195A TO220AB Infineon Technologies |
6,205 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | Through Hole | 2.5V @ 250µA | 140 nC @ 4.5 V | 60 V | ±16V | 11210 pF @ 50 V | - | - | TO-220AB | - | 380W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLR024ZTRPBFMOSFET N-CH 55V 16A DPAK Infineon Technologies |
7,702 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | Surface Mount | 3V @ 250µA | 9.9 nC @ 5 V | 55 V | ±16V | 380 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 35W (Tc) | -55°C ~ 175°C (TJ) |
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IRLU8726PBFMOSFET N-CH 30V 86A IPAK Infineon Technologies |
9,896 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | Through Hole | 2.35V @ 50µA | 23 nC @ 4.5 V | 30 V | ±20V | 2150 pF @ 15 V | - | - | IPAK | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLU8729-701PBFMOSFET N-CH 30V 58A IPAK Infineon Technologies |
8,374 | - |
|
数据表 |
HEXFET® | TO-252-4, DPAK (3 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | Surface Mount | 2.35V @ 25µA | 16 nC @ 4.5 V | 30 V | ±20V | 1350 pF @ 15 V | - | - | I-PAK (LF701) | - | 55W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF6201PBFMOSFET N-CH 20V 27A 8SO Infineon Technologies |
7,793 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 27A (Ta) | 2.5V, 4.5V | 2.45mOhm @ 27A, 4.5V | Surface Mount | 1.1V @ 100µA | 195 nC @ 4.5 V | 20 V | ±12V | 8555 pF @ 16 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF9317PBFMOSFET P-CH 30V 16A 8SO Infineon Technologies |
6,417 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 16A, 10V | Surface Mount | 2.4V @ 50µA | 92 nC @ 10 V | 30 V | ±20V | 2820 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF9321PBFMOSFET P-CH 30V 15A 8SO Infineon Technologies |
6,708 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | Surface Mount | 2.4V @ 50µA | 98 nC @ 10 V | 30 V | ±20V | 2590 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF9328PBFMOSFET P-CH 30V 12A 8SO Infineon Technologies |
4,286 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 11.9mOhm @ 12A, 10V | Surface Mount | 2.4V @ 25µA | 52 nC @ 10 V | 30 V | ±20V | 1680 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF9333PBFMOSFET P-CH 30V 9.2A 8SO Infineon Technologies |
7,310 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | Surface Mount | 2.4V @ 25µA | 38 nC @ 10 V | 30 V | ±20V | 1110 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
