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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPA50R140CPXKSA1MOSFET N-CH 500V 23A TO220-FP Infineon Technologies |
8,574 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | Through Hole | 3.5V @ 930µA | 64 nC @ 10 V | 500 V | ±20V | 2540 pF @ 100 V | - | - | PG-TO220-3-31 | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
BSC019N04NSGATMA1MOSFET N-CH 40V 30A/100A TDSON Infineon Technologies |
2,727 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta), 100A (Tc) | 10V | 1.9mOhm @ 50A, 10V | Surface Mount | 4V @ 85µA | 108 nC @ 10 V | 40 V | ±20V | 8800 pF @ 20 V | - | - | PG-TDSON-8-1 | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
|
IPLK80R900P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
2,159 | - |
|
数据表 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 800 V | ±20V | - | - | - | PG-TDSON-8 | - | - | - |
|
IPA60R600P7XKSA1MOSFET N-CH 600V 6A TO220 Infineon Technologies |
1 | - |
|
数据表 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | Through Hole | 4V @ 80µA | 9 nC @ 10 V | 600 V | ±20V | 363 pF @ 400 V | - | - | PG-TO220-FP | - | 21W (Tc) | -55°C ~ 150°C (TJ) |
|
IPD95R1K2P7ATMA1MOSFET N-CH 950V 6A TO252-3 Infineon Technologies |
8,969 | - |
|
数据表 |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | Surface Mount | 3.5V @ 140µA | 15 nC @ 10 V | 950 V | ±20V | 478 pF @ 400 V | - | - | PG-TO252-3 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF9204PBFMOSFET P-CH 40V 56A TO220AB Infineon Technologies |
4,663 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 56A (Ta) | 4.5V, 10V | 16mOhm @ 37A, 10V | Through Hole | 3V @ 100µA | 224 nC @ 10 V | 40 V | ±20V | 7676 pF @ 25 V | - | - | TO-220AB | - | 143W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFB3077GPBFMOSFET N-CH 75V 120A TO220AB Infineon Technologies |
8,640 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 220 nC @ 10 V | 75 V | ±20V | 9400 pF @ 50 V | - | - | TO-220AB | - | 370W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFB4310GPBFMOSFET N-CH 100V 130A TO220AB Infineon Technologies |
3,214 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 250 nC @ 10 V | 100 V | ±20V | 7670 pF @ 50 V | - | - | TO-220AB | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFB4310ZGPBFMOSFET N-CH 100V 120A TO220AB Infineon Technologies |
4,151 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | Through Hole | 4V @ 150µA | 170 nC @ 10 V | 100 V | ±20V | 6860 pF @ 50 V | - | - | TO-220AB | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFS4228TRLPBFMOSFET N-CH 150V 83A D2PAK Infineon Technologies |
9,112 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | Surface Mount | 5V @ 250µA | 107 nC @ 10 V | 150 V | ±30V | 4530 pF @ 25 V | - | - | D2PAK | - | 330W (Tc) | -40°C ~ 175°C (TJ) |
