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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF1405ZSTRL7PPMOSFET N-CH 55V 120A D2PAK Infineon Technologies |
5,700 | - |
|
数据表 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | Surface Mount | 4V @ 150µA | 230 nC @ 10 V | 55 V | ±20V | 5360 pF @ 25 V | - | - | D2PAK | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF6201TRPBFMOSFET N-CH 20V 27A 8SO Infineon Technologies |
9,338 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 27A (Ta) | 2.5V, 4.5V | 2.45mOhm @ 27A, 4.5V | Surface Mount | 1.1V @ 100µA | 195 nC @ 4.5 V | 20 V | ±12V | 8555 pF @ 16 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF7424GTRPBFMOSFET P-CH 30V 11A 8SO Infineon Technologies |
3,589 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | Surface Mount | 2.5V @ 250µA | 110 nC @ 10 V | 30 V | ±20V | 4030 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF7524D1GTRPBFMOSFET P-CH 20V 1.7A 8USMD Infineon Technologies |
3,931 | - |
|
数据表 |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 8.2 nC @ 4.5 V | 20 V | ±12V | 240 pF @ 15 V | - | Schottky Diode (Isolated) | 8-uSMD | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF8113GTRPBFMOSFET N-CH 30V 17.2A 8SO Infineon Technologies |
6,891 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | Surface Mount | 2.2V @ 250µA | 36 nC @ 4.5 V | 30 V | ±20V | 2910 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPLK80R1K2P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
8,872 | - |
|
数据表 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 800 V | ±20V | - | - | - | PG-TDSON-8 | - | - | - |
|
IPA60R125P6XKSA1MOSFET N-CH 600V 30A TO220-FP Infineon Technologies |
8,969 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | Through Hole | 4.5V @ 960µA | 56 nC @ 10 V | 600 V | ±20V | 2660 pF @ 100 V | - | - | PG-TO220-FP | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP60R125P6XKSA1MOSFET N-CH 600V 30A TO220-3 Infineon Technologies |
8,229 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | Through Hole | 4.5V @ 960µA | 56 nC @ 10 V | 600 V | ±20V | 2660 pF @ 100 V | - | - | PG-TO220-3 | - | 219W (Tc) | -55°C ~ 150°C (TJ) |
|
BSC025N03MSGATMA1MOSFET N-CH 30V 100A TDSON-8 Infineon Technologies |
2,515 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Ta). 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 30A, 10V | Surface Mount | 2V @ 250µA | 98 nC @ 10 V | 30 V | ±20V | 7600 pF @ 15 V | - | - | PG-TDSON-8-1 | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IPL60R650P6SATMA1MOSFET N-CH 600V 6.7A 8THINPAK Infineon Technologies |
6,109 | - |
|
数据表 |
CoolMOS™ P6 | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 6.7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | Surface Mount | 4.5V @ 200µA | 12 nC @ 10 V | 600 V | ±20V | 557 pF @ 100 V | - | - | 8-ThinPak (5x6) | - | 56.8W (Tc) | -40°C ~ 150°C (TJ) |
