Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 539

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP80N06S407AKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	8,525	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	7.4mOhm @ 80A, 10V	Through Hole	4V @ 40µA	56 nC @ 10 V	60 V	±20V	4500 pF @ 25 V	-	-	PG-TO220-3-1	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPP80P03P4L04AKSA1 MOSFET P-CH 30V 80A TO220-3 Infineon Technologies	3,432	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	4.4mOhm @ 80A, 10V	Through Hole	2V @ 253µA	160 nC @ 10 V	30 V	+5V, -16V	11300 pF @ 25 V	-	-	PG-TO220-3-1	-	137W (Tc)	-55°C ~ 175°C (TJ)
IPP80P03P4L07AKSA1 MOSFET P-CH 30V 80A TO220-3 Infineon Technologies	5,586	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	7.2mOhm @ 80A, 10V	Through Hole	2V @ 130µA	80 nC @ 10 V	30 V	+5V, -16V	5700 pF @ 25 V	-	-	PG-TO220-3-1	-	88W (Tc)	-55°C ~ 175°C (TJ)
BSZ0902NSIATMA1 MOSFET N-CH 30V 21A/40A TSDSON Infineon Technologies	9,614	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	21A (Ta), 40A (Tc)	4.5V, 10V	2.8mOhm @ 30A, 10V	Surface Mount	2V @ 250µA	24 nC @ 10 V	30 V	±20V	1500 pF @ 15 V	-	-	PG-TSDSON-8-FL	-	2.5W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)
IPA50R380CEXKSA2 MOSFET N-CH 500V 6.3A TO220 Infineon Technologies	1	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.3A (Tc)	13V	380mOhm @ 3.2A, 13V	Through Hole	3.5V @ 260µA	24.8 nC @ 10 V	500 V	±20V	584 pF @ 100 V	-	-	PG-TO220-3-FP	-	29.2W (Tc)	-40°C ~ 150°C (TJ)
IPP90N06S4L04AKSA1 MOSFET N-CH 60V 90A TO220-3 Infineon Technologies	7,632	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.7mOhm @ 90A, 10V	Through Hole	2.2V @ 90µA	170 nC @ 10 V	60 V	±16V	13000 pF @ 25 V	-	-	PG-TO220-3-1	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPS110N12N3GBKMA1 MOSFET N-CH 120V 75A TO251-3 Infineon Technologies	3,405	-	询价单	数据表	OptiMOS™	TO-251-3 Stub Leads, IPAK	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	11mOhm @ 75A, 10V	Through Hole	4V @ 83µA	65 nC @ 10 V	120 V	±20V	4310 pF @ 60 V	-	-	PG-TO251-3-11	-	136W (Tc)	-55°C ~ 175°C (TJ)
IPB031NE7N3GATMA1 MOSFET N-CH 75V 100A TO263-3 Infineon Technologies	8,131	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.1mOhm @ 100A, 10V	Surface Mount	3.8V @ 155µA	117 nC @ 10 V	75 V	±20V	8130 pF @ 37.5 V	-	-	PG-TO263-3-2	-	214W (Tc)	-55°C ~ 175°C (TJ)
IPP65R150CFDXKSA2 MOSFET N-CH 650V 22.4A TO220-3 Infineon Technologies	6,451	-	询价单	数据表	CoolMOS™ CFD2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22.4A (Tc)	10V	150mOhm @ 9.3A, 10V	Through Hole	4.5V @ 900µA	86 nC @ 10 V	650 V	±20V	2340 pF @ 100 V	-	-	PG-TO220-3	-	195.3W (Tc)	-55°C ~ 150°C (TJ)
IPB090N06N3GATMA1 MOSFET N-CH 60V 50A D2PAK Infineon Technologies	7,511	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	9mOhm @ 50A, 10V	Surface Mount	4V @ 34µA	36 nC @ 10 V	60 V	±20V	2900 pF @ 30 V	-	-	PG-TO263-3	-	71W (Tc)	-55°C ~ 175°C (TJ)

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