Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 538

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPI50R199CPXKSA1 MOSFET N-CH 500V 17A TO262-3 Infineon Technologies	3,561	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	199mOhm @ 9.9A, 10V	Through Hole	3.5V @ 660µA	45 nC @ 10 V	500 V	±20V	1800 pF @ 100 V	-	-	PG-TO262-3	-	139W (Tc)	-55°C ~ 150°C (TJ)
IPI60R380C6XKSA1 MOSFET N-CH 600V 10.6A TO262-3 Infineon Technologies	6,116	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	Through Hole	3.5V @ 320µA	32 nC @ 10 V	600 V	±20V	700 pF @ 100 V	-	-	PG-TO262-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPI80N06S405AKSA1 MOSFET N-CH 60V 80A TO262-3 Infineon Technologies	9,896	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.7mOhm @ 80A, 10V	Through Hole	4V @ 60µA	81 nC @ 10 V	60 V	±20V	6500 pF @ 25 V	-	-	PG-TO262-3	-	107W (Tc)	-55°C ~ 175°C (TJ)
IPI80N06S407AKSA1 MOSFET N-CH 60V 80A TO262-3 Infineon Technologies	5,134	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	7.4mOhm @ 80A, 10V	Through Hole	4V @ 40µA	56 nC @ 10 V	60 V	±20V	4500 pF @ 25 V	-	-	PG-TO262-3	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPI80P03P4L04AKSA1 MOSFET P-CH 30V 80A TO262-3 Infineon Technologies	9,980	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	4.4mOhm @ 80A, 10V	Through Hole	2V @ 253µA	160 nC @ 10 V	30 V	+5V, -16V	11300 pF @ 25 V	-	-	PG-TO262-3	-	137W (Tc)	-55°C ~ 175°C (TJ)
IPI80P03P4L07AKSA1 MOSFET P-CH 30V 80A TO262-3 Infineon Technologies	8,499	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	7.2mOhm @ 80A, 10V	Through Hole	2V @ 130µA	80 nC @ 10 V	30 V	+5V, -16V	5700 pF @ 25 V	-	-	PG-TO262-3	-	88W (Tc)	-55°C ~ 175°C (TJ)
IPP065N04N G MOSFET N-CH 40V 50A TO220-3 Infineon Technologies	2,554	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	6.5mOhm @ 50A, 10V	Through Hole	4V @ 200µA	34 nC @ 10 V	40 V	±20V	2800 pF @ 20 V	-	-	PG-TO220-3	-	68W (Tc)	-55°C ~ 175°C (TJ)
IPP120N06S4H1AKSA1 MOSFET N-CH 60V 120A TO220-3 Infineon Technologies	9,274	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.4mOhm @ 100A, 10V	Through Hole	4V @ 200µA	270 nC @ 10 V	60 V	±20V	21900 pF @ 25 V	-	-	PG-TO220-3-1	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPP80N04S3H4AKSA1 MOSFET N-CH 40V 80A TO220-3 Infineon Technologies	4,711	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	4.8mOhm @ 80A, 10V	Through Hole	4V @ 65µA	60 nC @ 10 V	40 V	±20V	3900 pF @ 25 V	-	-	PG-TO220-3-1	-	115W (Tc)	-55°C ~ 175°C (TJ)
IPP80N06S405AKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	9,731	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.7mOhm @ 80A, 10V	Through Hole	4V @ 60µA	81 nC @ 10 V	60 V	±20V	6500 pF @ 25 V	-	-	PG-TO220-3-1	-	107W (Tc)	-55°C ~ 175°C (TJ)

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