Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 537

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD90N06S407ATMA1 MOSFET N-CH 60V 90A TO252-3 Infineon Technologies	3,939	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	6.9mOhm @ 90A, 10V	Surface Mount	4V @ 40µA	56 nC @ 10 V	60 V	±20V	4500 pF @ 25 V	-	-	PG-TO252-3-11	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPD90N06S4L03ATMA1 MOSFET N-CH 60V 90A TO252-3 Infineon Technologies	8,216	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.5mOhm @ 90A, 10V	Surface Mount	2.2V @ 90µA	170 nC @ 10 V	60 V	±16V	13000 pF @ 25 V	-	-	PG-TO252-3-11	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPD90N06S4L05ATMA1 MOSFET N-CH 60V 90A TO252-3 Infineon Technologies	3,262	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	4.6mOhm @ 90A, 10V	Surface Mount	2.2V @ 60µA	110 nC @ 10 V	60 V	±16V	8180 pF @ 25 V	-	-	PG-TO252-3-11	-	107W (Tc)	-55°C ~ 175°C (TJ)
IPD90N06S4L06ATMA1 MOSFET N-CH 60V 90A TO252-3 Infineon Technologies	5,665	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	6.3mOhm @ 90A, 10V	Surface Mount	2.2V @ 40µA	75 nC @ 10 V	60 V	±16V	5680 pF @ 25 V	-	-	PG-TO252-3-11	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPI023NE7N3 G MOSFET N-CH 75V 120A TO262-3 Infineon Technologies	8,539	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	-	2.3mOhm @ 100A, 10V	Through Hole	3.8V @ 273µA	206 nC @ 10 V	75 V	-	14400 pF @ 37.5 V	-	-	PG-TO262-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPI034NE7N3 G MOSFET N-CH 75V 100A TO262-3 Infineon Technologies	7,700	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	3.4mOhm @ 100A, 10V	Through Hole	3.8V @ 155µA	117 nC @ 10 V	75 V	-	8130 pF @ 37.5 V	-	-	PG-TO262-3	-	214W (Tc)	-55°C ~ 175°C (TJ)
IPI052NE7N3 G MOSFET N-CH 75V 80A TO262-3 Infineon Technologies	2,885	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.2mOhm @ 80A, 10V	Through Hole	3.8V @ 91µA	68 nC @ 10 V	75 V	±20V	4750 pF @ 37.5 V	-	-	PG-TO262-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPI126N10N3 G MOSFET N-CH 100V 58A TO262-3 Infineon Technologies	5,326	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	6V, 10V	12.6mOhm @ 46A, 10V	Through Hole	3.5V @ 46µA	35 nC @ 10 V	100 V	±20V	2500 pF @ 50 V	-	-	PG-TO262-3	-	94W (Tc)	-55°C ~ 175°C (TJ)
IPI45N06S4L08AKSA1 MOSFET N-CH 60V 45A TO262-3 Infineon Technologies	7,975	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	4.5V, 10V	8.2mOhm @ 45A, 10V	Through Hole	2.2V @ 35µA	64 nC @ 10 V	60 V	±16V	4780 pF @ 25 V	-	-	PG-TO262-3	-	71W (Tc)	-55°C ~ 175°C (TJ)
IPI45P03P4L11AKSA1 MOSFET P-CH 30V 45A TO262-3 Infineon Technologies	5,897	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	45A (Tc)	4.5V, 10V	11.1mOhm @ 45A, 10V	Through Hole	2V @ 85µA	55 nC @ 10 V	30 V	+5V, -16V	3770 pF @ 25 V	-	-	PG-TO262-3	-	58W (Tc)	-55°C ~ 175°C (TJ)

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