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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD50N06S409ATMA1MOSFET N-CH 60V 50A TO252-3 Infineon Technologies |
2,624 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | Surface Mount | 4V @ 34µA | 47 nC @ 10 V | 60 V | ±20V | 3785 pF @ 25 V | - | - | PG-TO252-3-11 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD60R520C6BTMA1MOSFET N-CH 600V 8.1A TO252-3 Infineon Technologies |
4,054 | - |
|
数据表 |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | Surface Mount | 3.5V @ 230µA | 23.4 nC @ 10 V | 600 V | ±20V | 512 pF @ 100 V | - | - | PG-TO252-3 | - | 66W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPD90N06S404ATMA1MOSFET N-CH 60V 90A TO252-3 Infineon Technologies |
2,398 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | Surface Mount | 4V @ 90µA | 128 nC @ 10 V | 60 V | ±20V | 10400 pF @ 25 V | - | - | PG-TO252-3-11 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD90N06S405ATMA1MOSFET N-CH 60V 90A TO252-3 Infineon Technologies |
5,826 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 10V | 5.1mOhm @ 90A, 10V | Surface Mount | 4V @ 60µA | 81 nC @ 10 V | 60 V | ±20V | 6500 pF @ 25 V | - | - | PG-TO252-3-11 | - | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD90N04S4L04ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
5,340 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 3.8mOhm @ 90A, 10V | Surface Mount | 2.2V @ 35µA | 60 nC @ 10 V | 40 V | +20V, -16V | 4690 pF @ 25 V | AEC-Q101 | - | PG-TO252-3-313 | Automotive | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
IPI024N06N3GXKSA1MOSFET N-CH 60V 120A TO262-3 Infineon Technologies |
6,490 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | Through Hole | 4V @ 196µA | 275 nC @ 10 V | 60 V | ±20V | 23000 pF @ 30 V | - | - | PG-TO262-3-1 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
IPLK70R750P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
6,455 | - |
|
数据表 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 700 V | - | - | - | - | PG-TDSON-8 | - | - | - |
|
IPA80R310CEXKSA2MOSFET N-CH 800V 16.7A TO220-FP Infineon Technologies |
9,775 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 16.7A (Tc) | 10V | 310mOhm @ 11A, 10V | Through Hole | 3.9V @ 1mA | 91 nC @ 10 V | 800 V | ±20V | 2320 pF @ 100 V | - | - | PG-TO220-FP | - | 35W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IPLK80R2K0P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
2,223 | - |
|
数据表 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 800 V | ±20V | - | - | - | PG-TDSON-8 | - | - | - |
|
|
IPLK80R1K4P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
3,510 | - |
|
数据表 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 800 V | ±20V | - | - | - | PG-TDSON-8 | - | - | - |
