Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 535

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB80N06S405ATMA1 MOSFET N-CH 60V 80A TO263-3 Infineon Technologies	4,372	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.4mOhm @ 80A, 10V	Surface Mount	4V @ 60µA	81 nC @ 10 V	60 V	±20V	6500 pF @ 25 V	-	-	PG-TO263-3-2	-	107W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S407ATMA1 MOSFET N-CH 60V 80A TO263-3 Infineon Technologies	5,888	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	7.1mOhm @ 80A, 10V	Surface Mount	4V @ 40µA	56 nC @ 10 V	60 V	±20V	4500 pF @ 25 V	-	-	PG-TO263-3-2	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S4L05ATMA1 MOSFET N-CH 60V 80A TO263-3 Infineon Technologies	6,324	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	4.8mOhm @ 80A, 10V	Surface Mount	2.2V @ 60µA	110 nC @ 10 V	60 V	±16V	8180 pF @ 25 V	-	-	PG-TO263-3-2	-	107W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S4L07ATMA1 MOSFET N-CH 60V 80A TO263-3 Infineon Technologies	3,957	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	6.4mOhm @ 80A, 10V	Surface Mount	2.2V @ 40µA	75 nC @ 10 V	60 V	±16V	5680 pF @ 25 V	-	-	PG-TO263-3-2	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPB80P03P405ATMA1 MOSFET P-CH 30V 80A TO263-3 Infineon Technologies	6,811	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	4.7mOhm @ 80A, 10V	Surface Mount	4V @ 253µA	130 nC @ 10 V	30 V	±20V	10300 pF @ 25 V	-	-	PG-TO263-3-2	-	137W (Tc)	-55°C ~ 175°C (TJ)
IPB90N06S404ATMA1 MOSFET N-CH 60V 90A TO263-3 Infineon Technologies	4,186	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	3.7mOhm @ 90A, 10V	Surface Mount	4V @ 90µA	128 nC @ 10 V	60 V	±20V	10400 pF @ 25 V	-	-	PG-TO263-3-2	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPB90N06S4L04ATMA1 MOSFET N-CH 60V 90A TO263-3 Infineon Technologies	6,498	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.4mOhm @ 90A, 10V	Surface Mount	2.2V @ 90µA	170 nC @ 10 V	60 V	±16V	13000 pF @ 25 V	-	-	PG-TO263-3-2	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPD180N10N3GBTMA1 MOSFET N-CH 100V 43A TO252-3 Infineon Technologies	9,931	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	6V, 10V	18mOhm @ 33A, 10V	Surface Mount	3.5V @ 33µA	25 nC @ 10 V	100 V	±20V	1800 pF @ 50 V	-	-	PG-TO252-3	-	71W (Tc)	-55°C ~ 175°C (TJ)
IPD25N06S4L30ATMA1 MOSFET N-CH 60V 25A TO252-31 Infineon Technologies	4,163	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	4.5V, 10V	30mOhm @ 25A, 10V	Surface Mount	2.2V @ 8µA	16.3 nC @ 10 V	60 V	±16V	1220 pF @ 25 V	-	-	PG-TO252-3-11	-	29W (Tc)	-55°C ~ 175°C (TJ)
IPD30N06S4L23ATMA1 MOSFET N-CH 60V 30A TO252-3 Infineon Technologies	5,023	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	23mOhm @ 30A, 10V	Surface Mount	2.2V @ 10µA	21 nC @ 10 V	60 V	±16V	1560 pF @ 25 V	-	-	PG-TO252-3-11	-	36W (Tc)	-55°C ~ 175°C (TJ)

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