Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 534

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSS159NH6327XTSA1 MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies	2,105	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	230mA (Ta)	0V, 10V	3.5Ohm @ 160mA, 10V	Surface Mount	2.4V @ 26µA	2.9 nC @ 5 V	60 V	±20V	44 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
BSS816NW L6327 MOSFET N-CH 20V 1.4A SOT323-3 Infineon Technologies	9,033	-	询价单	数据表	OptiMOS™	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.4A (Ta)	1.8V, 2.5V	160mOhm @ 1.4A, 2.5V	Surface Mount	750mV @ 3.7µA	0.6 nC @ 2.5 V	20 V	±8V	180 pF @ 10 V	-	-	PG-SOT323	-	500mW (Ta)	-55°C ~ 150°C (TJ)
IPA032N06N3GXKSA1 MOSFET N-CH 60V 84A TO220-3-31 Infineon Technologies	3,141	-	询价单	数据表	OptiMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	84A (Tc)	10V	3.2mOhm @ 80A, 10V	Through Hole	4V @ 118µA	165 nC @ 10 V	60 V	±20V	13000 pF @ 30 V	-	-	PG-TO220-3-31	-	41W (Tc)	-55°C ~ 175°C (TJ)
BSZ120P03NS3EGATMA1 MOSFET P-CH 30V 11A/40A 8TSDSON Infineon Technologies	4,852	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	11A (Ta), 40A (Tc)	6V, 10V	12mOhm @ 20A, 10V	Surface Mount	3.1V @ 73µA	45 nC @ 10 V	30 V	±25V	3360 pF @ 15 V	-	-	PG-TSDSON-8	-	2.1W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
IPB120N06S402ATMA1 MOSFET N-CH 60V 120A TO263-3 Infineon Technologies	3,159	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.4mOhm @ 100A, 10V	Surface Mount	4V @ 140µA	195 nC @ 10 V	60 V	±20V	15750 pF @ 25 V	-	-	PG-TO263-3-2	-	188W (Tc)	-55°C ~ 175°C (TJ)
IPB120N06S403ATMA1 MOSFET N-CH 60V 120A TO263-3 Infineon Technologies	7,241	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.8mOhm @ 100A, 10V	Surface Mount	4V @ 120µA	160 nC @ 10 V	60 V	±20V	13150 pF @ 25 V	-	-	PG-TO263-3-2	-	167W (Tc)	-55°C ~ 175°C (TJ)
IPB120N06S4H1ATMA1 MOSFET N-CH 60V 120A TO263-3 Infineon Technologies	8,729	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.1mOhm @ 100A, 10V	Surface Mount	4V @ 200µA	270 nC @ 10 V	60 V	±20V	21900 pF @ 25 V	-	-	PG-TO263-3-2	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPB180N06S4H1ATMA1 MOSFET N-CH 60V 180A TO263-7 Infineon Technologies	3,921	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	1.7mOhm @ 100A, 10V	Surface Mount	4V @ 200µA	270 nC @ 10 V	60 V	±20V	21900 pF @ 25 V	-	-	PG-TO263-7-3	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPB45N06S409ATMA1 MOSFET N-CH 60V 45A TO263-3 Infineon Technologies	7,417	-	询价单	数据表	OptiMOS™ T2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	9.1mOhm @ 45A, 10V	Surface Mount	4V @ 34µA	47 nC @ 10 V	60 V	±20V	3785 pF @ 25 V	-	-	PG-TO263-3-2	-	71W (Tc)	-55°C ~ 175°C (TJ)
IPB45N06S4L08ATMA1 MOSFET N-CH 60V 45A TO263-3 Infineon Technologies	7,325	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	4.5V, 10V	7.9mOhm @ 45A, 10V	Surface Mount	2.2V @ 35µA	64 nC @ 10 V	60 V	±16V	4780 pF @ 25 V	-	-	PG-TO263-3-2	-	71W (Tc)	-55°C ~ 175°C (TJ)

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