Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 533

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD80R4K5P7ATMA1 MOSFET N-CH 800V 1.5A TO252 Infineon Technologies	3,040	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Tc)	10V	4.5Ohm @ 400mA, 10V	Surface Mount	3.5V @ 200µA	4 nC @ 10 V	800 V	±20V	80 pF @ 500 V	-	-	PG-TO252-3	-	13W (Tc)	-55°C ~ 150°C (TJ)
IPP023N04NGXKSA1 MOSFET N-CH 40V 90A TO220-3 Infineon Technologies	2,626	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	2.3mOhm @ 90A, 10V	Through Hole	4V @ 95µA	120 nC @ 10 V	40 V	±20V	10000 pF @ 20 V	-	-	PG-TO220-3	-	167W (Tc)	-55°C ~ 175°C (TJ)
IPAN80R360P7XKSA1 MOSFET N-CH 800V 13A TO220 Infineon Technologies	3,165	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	360mOhm @ 5.6A, 10V	Through Hole	3.5V @ 280µA	30 nC @ 10 V	800 V	±20V	930 pF @ 500 V	-	-	PG-TO220-FP	-	30W (Tc)	-55°C ~ 150°C (TJ)
BSB012N03LX3 G MOSFET N-CH 30V 39A/180A 2WDSON Infineon Technologies	6,999	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	39A (Ta), 180A (Tc)	4.5V, 10V	1.2mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	169 nC @ 10 V	30 V	±20V	16900 pF @ 15 V	-	-	MG-WDSON-2, CanPAK M™	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
BSB017N03LX3 G MOSFET N-CH 30V 32A/147A 2WDSON Infineon Technologies	3,535	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	32A (Ta), 147A (Tc)	4.5V, 10V	1.7mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	102 nC @ 10 V	30 V	±20V	7800 pF @ 15 V	-	-	MG-WDSON-2, CanPAK M™	-	2.8W (Ta), 57W (Tc)	-40°C ~ 150°C (TJ)
BSF024N03LT3GXUMA1 MOSFET N-CH 30V 15A/106A 2WDSON Infineon Technologies	2,679	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 106A (Tc)	4.5V, 10V	2.4mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	71 nC @ 10 V	30 V	±20V	5500 pF @ 15 V	-	-	MG-WDSON-2, CanPAK M™	-	2.2W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
BSF050N03LQ3GXUMA1 MOSFET N-CH 30V 15A/60A 2WDSON Infineon Technologies	8,788	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 60A (Tc)	4.5V, 10V	5mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	42 nC @ 10 V	30 V	±20V	3000 pF @ 15 V	-	-	MG-WDSON-2, CanPAK M™	-	2.2W (Ta), 28W (Tc)	-40°C ~ 150°C (TJ)
IPA65R190C7XKSA1 MOSFET N-CH 650V 8A TO220-FP Infineon Technologies	2,246	-	询价单	数据表	CoolMOS™ C7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	190mOhm @ 5.7A, 10V	Through Hole	4V @ 290µA	23 nC @ 10 V	650 V	±20V	1150 pF @ 400 V	-	-	PG-TO220-FP	-	30W (Tc)	-55°C ~ 150°C (TJ)
BSS126H6327XTSA1 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	9,906	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	21mA (Ta)	0V, 10V	500Ohm @ 16mA, 10V	Surface Mount	2.7V @ 8µA	2.1 nC @ 5 V	600 V	±20V	28 pF @ 25 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
BSS127H6327XTSA1 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	5,164	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21mA (Ta)	4.5V, 10V	500Ohm @ 16mA, 10V	Surface Mount	2.6V @ 8µA	1 nC @ 10 V	600 V	±20V	28 pF @ 25 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)

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