Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 532

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP530N15N3GXKSA1 MOSFET N-CH 150V 21A TO220-3 Infineon Technologies	5,722	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	8V, 10V	53mOhm @ 18A, 10V	Through Hole	4V @ 35µA	12 nC @ 10 V	150 V	±20V	887 pF @ 75 V	-	-	PG-TO220-3-1	-	68W (Tc)	-55°C ~ 175°C (TJ)
IPP60R380C6XKSA1 MOSFET N-CH 600V 10.6A TO220-3 Infineon Technologies	8,344	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	Through Hole	3.5V @ 320µA	32 nC @ 10 V	600 V	±20V	700 pF @ 100 V	-	-	PG-TO220-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPP60R600C6XKSA1 MOSFET N-CH 600V 7.3A TO220-3 Infineon Technologies	6,551	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	Through Hole	3.5V @ 200µA	20.5 nC @ 10 V	600 V	±20V	440 pF @ 100 V	-	-	PG-TO220-3	-	63W (Tc)	-55°C ~ 150°C (TJ)
IRFH5250DTRPBF MOSFET N-CH 25V 40A/100A 8PQFN Infineon Technologies	8,510	-	询价单	数据表	HEXFET®	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Ta), 100A (Tc)	4.5V, 10V	1.4mOhm @ 50A, 10V	Surface Mount	2.35V @ 150µA	83 nC @ 10 V	25 V	±20V	6115 pF @ 13 V	-	-	8-PQFN (5x6)	-	3.6W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)
IRFH5255TRPBF MOSFET N-CH 25V 15A/51A 8PQFN Infineon Technologies	5,735	-	询价单	数据表	HEXFET®	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 51A (Tc)	4.5V, 10V	6mOhm @ 15A, 10V	Surface Mount	2.35V @ 25µA	14.5 nC @ 10 V	25 V	±20V	988 pF @ 13 V	-	-	8-PQFN (5x6)	-	3.6W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)
IRLR8256PBF MOSFET N-CH 25V 81A DPAK Infineon Technologies	9,146	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	81A (Tc)	4.5V, 10V	5.7mOhm @ 25A, 10V	Surface Mount	2.35V @ 25µA	15 nC @ 4.5 V	25 V	±20V	1470 pF @ 13 V	-	-	TO-252AA (DPAK)	-	63W (Tc)	-55°C ~ 175°C (TJ)
IPP60R280P6XKSA1 MOSFET N-CH 600V 13.8A TO220-3 Infineon Technologies	6,660	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	13.8A (Tc)	10V	280mOhm @ 6.5A, 10V	Through Hole	3.5V @ 430µA	43 nC @ 10 V	600 V	±20V	950 pF @ 100 V	-	-	PG-TO220-3	-	104W (Tc)	-55°C ~ 150°C (TJ)
IRLR8259PBF MOSFET N-CH 25V 57A DPAK Infineon Technologies	2,526	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	4.5V, 10V	8.7mOhm @ 21A, 10V	Surface Mount	2.35V @ 25µA	10 nC @ 4.5 V	25 V	±20V	900 pF @ 13 V	-	-	TO-252AA (DPAK)	-	48W (Tc)	-55°C ~ 175°C (TJ)
IRLR8256TRPBF MOSFET N-CH 25V 81A DPAK Infineon Technologies	7,192	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	81A (Tc)	4.5V, 10V	5.7mOhm @ 25A, 10V	Surface Mount	2.35V @ 25µA	15 nC @ 4.5 V	25 V	±20V	1470 pF @ 13 V	-	-	TO-252AA (DPAK)	-	63W (Tc)	-55°C ~ 175°C (TJ)
IRFSL3306PBF MOSFET N-CH 60V 120A TO262 Infineon Technologies	7,123	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.2mOhm @ 75A, 10V	Through Hole	4V @ 150µA	120 nC @ 10 V	60 V	±20V	4520 pF @ 50 V	-	-	TO-262	-	230W (Tc)	-55°C ~ 175°C (TJ)

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