Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 531

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF7815PBF MOSFET N-CH 150V 5.1A 8SO Infineon Technologies	8,025	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	5.1A (Ta)	10V	43mOhm @ 3.1A, 10V	Surface Mount	5V @ 100µA	38 nC @ 10 V	150 V	±20V	1647 pF @ 75 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRF9310PBF MOSFET P-CH 30V 20A 8SO Infineon Technologies	8,894	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	4.6mOhm @ 20A, 10V	Surface Mount	2.4V @ 100µA	165 nC @ 10 V	30 V	±20V	5250 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IPA60R600P6XKSA1 MOSFET N-CH 600V 4.9A TO220-FP Infineon Technologies	8,619	-	询价单	数据表	CoolMOS™ P6	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.9A (Tc)	10V	600mOhm @ 2.4A, 10V	Through Hole	4.5V @ 200µA	12 nC @ 10 V	600 V	±20V	557 pF @ 100 V	-	-	PG-TO220-FP	-	28W (Tc)	-55°C ~ 150°C (TJ)
IPA65R600E6XKSA1 MOSFET N-CH 650V 7.3A TO220-FP Infineon Technologies	2,022	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	Through Hole	3.5V @ 210µA	23 nC @ 10 V	650 V	±20V	440 pF @ 100 V	-	-	PG-TO220-FP	-	28W (Tc)	-55°C ~ 150°C (TJ)
IPP052N06L3GXKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	8,392	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	5mOhm @ 80A, 10V	Through Hole	2.2V @ 58µA	50 nC @ 4.5 V	60 V	±20V	8400 pF @ 30 V	-	-	PG-TO220-3	-	115W (Tc)	-55°C ~ 175°C (TJ)
IPA80R1K0CEXKSA2 MOSFET N-CH 800V 5.7A TO220-FP Infineon Technologies	9,897	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.7A (Tc)	10V	950mOhm @ 3.6A, 10V	Through Hole	3.9V @ 250µA	31 nC @ 10 V	800 V	±20V	785 pF @ 100 V	-	-	PG-TO220-FP	-	32W (Tc)	-40°C ~ 150°C (TJ)
IPP086N10N3GXKSA1 MOSFET N-CH 100V 80A TO220-3 Infineon Technologies	7,855	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	6V, 10V	8.6mOhm @ 73A, 10V	Through Hole	3.5V @ 75µA	55 nC @ 10 V	100 V	±20V	3980 pF @ 50 V	-	-	PG-TO220-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
IPD60R380C6 MOSFET N-CH 600V 10.6A TO252-3 Infineon Technologies	7,856	-	询价单	数据表	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	Surface Mount	3.5V @ 320µA	32 nC @ 10 V	600 V	±20V	700 pF @ 100 V	-	-	PG-TO252-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPD60R600C6BTMA1 MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies	5,798	-	询价单	数据表	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	Surface Mount	3.5V @ 200µA	20.5 nC @ 10 V	600 V	±20V	440 pF @ 100 V	-	-	PG-TO252-3	-	63W (Tc)	-55°C ~ 150°C (TJ)
IPD60R950C6 MOSFET N-CH 600V 4.4A TO252-3 Infineon Technologies	3,423	-	询价单	数据表	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	4.4A (Tc)	10V	950mOhm @ 1.5A, 10V	Surface Mount	3.5V @ 130µA	13 nC @ 10 V	600 V	±20V	280 pF @ 100 V	-	-	PG-TO252-3	-	37W (Tc)	-55°C ~ 150°C (TJ)

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