Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 530

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF7759L2TR1PBF MOSFET N-CH 75V 26A DIRECTFET Infineon Technologies	3,022	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Ta), 375A (Tc)	10V	2.3mOhm @ 96A, 10V	Surface Mount	4V @ 250µA	300 nC @ 10 V	75 V	±20V	12222 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IRF7769L2TR1PBF MOSFET N-CH 100V 375A DIRECTFET Infineon Technologies	5,768	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	375A (Tc)	10V	3.5mOhm @ 74A, 10V	Surface Mount	4V @ 250µA	300 nC @ 10 V	100 V	±20V	11560 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IRF7799L2TR1PBF MOSFET N-CH 250V 375A DIRECTFET Infineon Technologies	9,776	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	375A (Tc)	10V	38mOhm @ 21A, 10V	Surface Mount	5V @ 250µA	165 nC @ 10 V	250 V	±30V	6714 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	4.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IRFH5306TRPBF MOSFET N-CH 30V 15A/44A PQFN Infineon Technologies	4,547	-	询价单	数据表	HEXFET®	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 44A (Tc)	4.5V, 10V	8.1mOhm @ 15A, 10V	Surface Mount	2.35V @ 25µA	12 nC @ 4.5 V	30 V	±20V	1125 pF @ 15 V	-	-	PQFN (5x6) Single Die	-	3.6W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)
IRF7759L2TRPBF MOSFET N-CH 75V 26A DIRECTFET Infineon Technologies	4,010	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Ta), 375A (Tc)	10V	2.3mOhm @ 96A, 10V	Surface Mount	4V @ 250µA	300 nC @ 10 V	75 V	±20V	12222 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IPA65R650CEXKSA1 MOSFET N-CH 650V 7A TO220 Infineon Technologies	5,661	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	650mOhm @ 2.1A, 10V	Through Hole	3.5V @ 210µA	23 nC @ 10 V	650 V	±20V	440 pF @ 100 V	-	-	PG-TO220-3-FP	-	28W (Tc)	-40°C ~ 150°C (TJ)
IPA60R400CEXKSA1 MOSFET N-CH 600V 10.3A TO220-FP Infineon Technologies	3,356	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10.3A (Tc)	10V	400mOhm @ 3.8A, 10V	Through Hole	3.5V @ 300µA	32 nC @ 10 V	600 V	±20V	700 pF @ 100 V	-	-	PG-TO220-FP	-	31W (Tc)	-40°C ~ 150°C (TJ)
IPA60R360P7XKSA1 MOSFET N-CHANNEL 650V 9A TO220 Infineon Technologies	8,738	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	360mOhm @ 2.7A, 10V	Through Hole	4V @ 140µA	13 nC @ 10 V	650 V	±20V	555 pF @ 400 V	-	-	PG-TO220 Full Pack	-	22W (Tc)	-55°C ~ 150°C (TJ)
IPU95R750P7AKMA1 MOSFET N-CH 950V 9A TO251-3 Infineon Technologies	7,622	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	750mOhm @ 4.5A, 10V	Through Hole	3.5V @ 220µA	23 nC @ 10 V	950 V	±20V	712 pF @ 400 V	-	-	PG-TO251-3	-	73W (Tc)	-55°C ~ 150°C (TJ)
IRF7799L2TRPBF MOSFET N-CH 250V 375A DIRECTFET Infineon Technologies	4,411	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	38mOhm @ 21A, 10V	Surface Mount	5V @ 250µA	165 nC @ 10 V	250 V	±30V	6714 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	4.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)

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