Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 529

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF8721GPBF MOSFET N-CH 30V 14A 8SO Infineon Technologies	5,394	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	4.5V, 10V	8.5mOhm @ 14A, 10V	Surface Mount	2.35V @ 25µA	12 nC @ 4.5 V	30 V	±20V	1040 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRF7665S2TRPBF MOSFET N-CH 100V 4.1A DIRECTFET Infineon Technologies	2,794	-	询价单	数据表	-	DirectFET™ Isometric SB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.1A (Ta), 14.4A (Tc)	10V	62mOhm @ 8.9A, 10V	Surface Mount	5V @ 25µA	13 nC @ 10 V	100 V	±20V	515 pF @ 25 V	-	-	DIRECTFET SB	-	2.4W (Ta), 30W (Tc)	-55°C ~ 175°C (TJ)
IRF6718L2TR1PBF MOSFET N-CH 25V 61A DIRECTFET Infineon Technologies	8,562	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	61A (Ta), 270A (Tc)	4.5V, 10V	0.7mOhm @ 61A, 10V	Surface Mount	2.35V @ 150µA	96 nC @ 4.5 V	25 V	±20V	6500 pF @ 13 V	-	-	DIRECTFET L6	-	4.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
IRF6718L2TRPBF MOSFET N-CH 25V 61A DIRECTFET Infineon Technologies	5,445	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	61A (Ta), 270A (Tc)	4.5V, 10V	0.7mOhm @ 61A, 10V	Surface Mount	2.35V @ 150µA	96 nC @ 4.5 V	25 V	±20V	6500 pF @ 13 V	-	-	DIRECTFET L6	-	4.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
IPS70R1K4P7SAKMA1 MOSFET N-CH 700V 4A TO251-3 Infineon Technologies	3,749	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.4Ohm @ 700mA, 10V	Through Hole	3.5V @ 40µA	4.7 nC @ 10 V	700 V	±16V	158 pF @ 400 V	-	-	PG-TO251-3	-	22.7W (Tc)	-40°C ~ 150°C (TJ)
IPA50R950CEXKSA2 MOSFET N-CH 500V 3.7A TO220 Infineon Technologies	2,409	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.7A (Tc)	13V	950mOhm @ 1.2A, 13V	Through Hole	3.5V @ 100µA	10.5 nC @ 10 V	500 V	±20V	231 pF @ 100 V	-	-	PG-TO220-3-FP	-	25.7W (Tc)	-40°C ~ 150°C (TJ)
IPAN70R600P7SXKSA1 MOSFET N-CH 700V 8.5A TO220 Infineon Technologies	8,288	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8.5A (Tc)	10V	600mOhm @ 1.8A, 10V	Through Hole	3.5V @ 90µA	10.5 nC @ 10 V	700 V	±16V	364 pF @ 400 V	-	-	PG-TO220-FP	-	24.9W (Tc)	-40°C ~ 150°C (TJ)
IRF7739L2TR1PBF MOSFET N-CH 40V 46A DIRECTFET Infineon Technologies	2,405	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	46A (Ta), 375A (Tc)	10V	1mOhm @ 160A, 10V	Surface Mount	4V @ 250µA	330 nC @ 10 V	40 V	±20V	11880 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	3.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IRF7749L2TR1PBF MOSFET N-CH 60V 33A DIRECTFET Infineon Technologies	2,447	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	33A (Ta), 375A (Tc)	10V	1.5mOhm @ 120A, 10V	Surface Mount	4V @ 250µA	300 nC @ 10 V	60 V	±20V	12320 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IPAN70R360P7SXKSA1 MOSFET N-CH 700V 12.5A TO220 Infineon Technologies	6,992	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12.5A (Tc)	10V	360mOhm @ 3A, 10V	Through Hole	3.5V @ 150µA	16.4 nC @ 10 V	700 V	±16V	517 pF @ 400 V	-	-	PG-TO220-FP	-	26.5W (Tc)	-40°C ~ 150°C (TJ)

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