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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF1404ZGPBFMOSFET N-CH 40V 180A TO220AB Infineon Technologies |
6,509 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 150 nC @ 10 V | 40 V | ±20V | 4340 pF @ 25 V | - | - | TO-220AB | - | 220W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7665S2TR1PBFMOSFET N-CH 100V 4.1A DIRECTFET Infineon Technologies |
9,247 | - |
|
数据表 |
- | DirectFET™ Isometric SB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.1A (Ta), 14.4A (Tc) | 10V | 62mOhm @ 8.9A, 10V | Surface Mount | 5V @ 25µA | 13 nC @ 10 V | 100 V | ±20V | 515 pF @ 25 V | - | - | DIRECTFET SB | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF8714GTRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
8,706 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | Surface Mount | 2.35V @ 25µA | 12 nC @ 4.5 V | 30 V | ±20V | 1020 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF8721GTRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
5,788 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | Surface Mount | 2.35V @ 25µA | 12 nC @ 4.5 V | 30 V | ±20V | 1040 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRFB3004GPBFMOSFET N-CH 40V 195A TO220AB Infineon Technologies |
8,824 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 40 V | ±20V | 9200 pF @ 25 V | - | - | TO-220AB | - | 380W (Tc) | -55°C ~ 175°C (TJ) |
|
IPW65R065C7XKSA1MOSFET N-CH 650V 33A TO247-3 Infineon Technologies |
7,494 | - |
|
数据表 |
CoolMOS™ C7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | Through Hole | 4V @ 850µA | 64 nC @ 10 V | 650 V | ±20V | 3020 pF @ 400 V | - | - | PG-TO247-3 | - | 171W (Tc) | -55°C ~ 150°C (TJ) |
|
IMZ120R140M1HXKSA1SICFET N-CH 1.2KV 19A TO247-4 Infineon Technologies |
22 | - |
|
数据表 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 19A (Tc) | 15V, 18V | 182mOhm @ 6A, 18V | Through Hole | 5.7V @ 2.5mA | 13 nC @ 18 V | 1200 V | +23V, -7V | 454 pF @ 800 V | - | - | PG-TO247-4-1 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IMW65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
15 | - |
|
数据表 |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 24A (Tc) | 18V | 111mOhm @ 11.2A, 18V | Through Hole | 5.7V @ 3.3mA | 19 nC @ 18 V | 650 V | +20V, -2V | 624 pF @ 400 V | - | - | PG-TO247-3-41 | - | 104W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF8707GPBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
8,966 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | Surface Mount | 2.35V @ 25µA | 9.3 nC @ 4.5 V | 30 V | ±20V | 760 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF8714GPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
2,058 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | Surface Mount | 2.35V @ 25µA | 12 nC @ 4.5 V | 30 V | ±20V | 1020 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
