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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFB4410ZGPBFMOSFET N-CH 100V 97A TO220AB Infineon Technologies |
7,391 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | Through Hole | 4V @ 150µA | 120 nC @ 10 V | 100 V | ±20V | 4820 pF @ 50 V | - | - | TO-220AB | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFSL3004PBFMOSFET N-CH 40V 195A TO262 Infineon Technologies |
2,450 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Ta) | 10V | 1.75mOhm @ 195A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 40 V | ±20V | 9200 pF @ 25 V | - | - | TO-262 | - | 380W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFSL4020PBFMOSFET N-CH 200V 18A TO262 Infineon Technologies |
4,079 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 105mOhm @ 11A, 10V | Through Hole | 4.9V @ 100µA | 29 nC @ 10 V | 200 V | ±20V | 1200 pF @ 50 V | - | - | TO-262 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFSL4115PBFMOSFET N-CH 150V 195A TO262 Infineon Technologies |
3,045 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 12.1mOhm @ 62A, 10V | Through Hole | 5V @ 250µA | 120 nC @ 10 V | 150 V | ±20V | 5270 pF @ 50 V | - | - | TO-262 | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRLSL3034PBFMOSFET N-CH 40V 195A TO262 Infineon Technologies |
8,988 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | Through Hole | 2.5V @ 250µA | 162 nC @ 4.5 V | 40 V | ±20V | 10315 pF @ 25 V | - | - | TO-262 | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
IQE050N08NM5CGSCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
9,891 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Ta), 99A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | Surface Mount | 3.8V @ 49µA | 44 nC @ 10 V | 80 V | ±20V | 2900 pF @ 40 V | - | - | PG-WHTFN-9-1 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPW95R310PFD7XKSA1MOSFET N-CH 950V 17.5A TO247-3 Infineon Technologies |
7,433 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 17.5A (Tc) | 10V | 310mOhm @ 10.4A, 10V | Through Hole | 3.5V @ 520µA | 61 nC @ 10 V | 950 V | ±20V | 1765 pF @ 400 V | - | - | PG-TO247-3-41 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
IPDD60R150G7XTMA1MOSFET N-CH 600V 16A HDSOP-10 Infineon Technologies |
5,307 | - |
|
数据表 |
CoolMOS™ G7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 150mOhm @ 5.3A, 10V | Surface Mount | 4V @ 260µA | 23 nC @ 10 V | 600 V | ±20V | 902 pF @ 400 V | - | - | PG-HDSOP-10-1 | - | 95W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW60R190P6FKSA1MOSFET N-CH 600V 20.2A TO247-3 Infineon Technologies |
10 | - |
|
数据表 |
CoolMOS™ P6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | Through Hole | 4.5V @ 630µ | 11 nC @ 10 V | 600 V | ±20V | 1750 pF @ 100 V | - | - | PG-TO247-3 | - | 151W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA60R199CPXKSA1MOSFET N-CH 650V 16A TO220-FP Infineon Technologies |
9,386 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | Through Hole | 3.5V @ 1.1mA | 43 nC @ 10 V | 650 V | ±20V | 1520 pF @ 100 V | - | - | PG-TO220-3-31 | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
