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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLS4030PBFMOSFET N-CH 100V 180A D2PAK Infineon Technologies |
6,558 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | Surface Mount | 2.5V @ 250µA | 130 nC @ 4.5 V | 100 V | ±16V | 11360 pF @ 50 V | - | - | D2PAK | - | 370W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF1324LPBFMOSFET N-CH 24V 195A TO262 Infineon Technologies |
2,609 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 24 V | ±20V | 7590 pF @ 24 V | - | - | TO-262 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF1324STRLPBFMOSFET N-CH 24V 195A D2PAK Infineon Technologies |
7,368 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | Surface Mount | 4V @ 250µA | 240 nC @ 10 V | 24 V | ±20V | 7590 pF @ 24 V | - | - | D2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFB3307ZGPBFMOSFET N-CH 75V 120A TO220AB Infineon Technologies |
3,015 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | Through Hole | 4V @ 150µA | 110 nC @ 10 V | 75 V | ±20V | 4750 pF @ 50 V | - | - | TO-220AB | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA041N04NGXKSA1MOSFET N-CH 40V 70A TO220-FP Infineon Technologies |
10 | - |
|
数据表 |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 4.1mOhm @ 70A, 10V | Through Hole | 4V @ 45µA | 56 nC @ 10 V | 40 V | ±20V | 4500 pF @ 20 V | - | - | PG-TO220-FP | - | 35W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP60R360P7XKSA1MOSFET N-CH 650V 9A TO220-3 Infineon Technologies |
4,627 | - |
|
数据表 |
CoolMOS™ P7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | Through Hole | 4V @ 140µA | 13 nC @ 10 V | 650 V | ±20V | 555 pF @ 400 V | - | - | PG-TO220-3 | - | 41W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFS7540TRLPBFMOSFET N-CH 60V 110A D2PAK Infineon Technologies |
4,886 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | Surface Mount | 3.7V @ 100µA | 130 nC @ 10 V | 60 V | ±20V | 4555 pF @ 25 V | - | - | PG-TO263-3 | - | 160W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFB4110GPBFMOSFET N-CH 100V 120A TO220AB Infineon Technologies |
6,972 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 210 nC @ 10 V | 100 V | ±20V | 9620 pF @ 50 V | - | - | TO-220AB | - | 370W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFB4115GPBFMOSFET N-CH 150V 104A TO220AB Infineon Technologies |
7,817 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 104A (Tc) | 10V | 11mOhm @ 62A, 10V | Through Hole | 5V @ 250µA | 120 nC @ 10 V | 150 V | ±20V | 5270 pF @ 50 V | - | - | TO-220AB | - | 380W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFB4321GPBFMOSFET N-CH 150V 83A TO220AB Infineon Technologies |
8,168 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | Through Hole | 5V @ 250µA | 110 nC @ 10 V | 150 V | ±30V | 4460 pF @ 25 V | - | - | TO-220AB | - | 330W (Tc) | -55°C ~ 175°C (TJ) |
