Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 525

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFS4115PBF MOSFET N-CH 150V 195A D2PAK Infineon Technologies	2,895	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	12.1mOhm @ 62A, 10V	Surface Mount	5V @ 250µA	120 nC @ 10 V	150 V	±20V	5270 pF @ 50 V	-	-	D2PAK	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRFS4127PBF MOSFET N-CH 200V 72A D2PAK Infineon Technologies	3,105	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	72A (Tc)	10V	22mOhm @ 44A, 10V	Surface Mount	5V @ 250µA	150 nC @ 10 V	200 V	±20V	5380 pF @ 50 V	-	-	D2PAK	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRFS4615PBF MOSFET N-CH 150V 33A D2PAK Infineon Technologies	4,844	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	42mOhm @ 21A, 10V	Surface Mount	5V @ 100µA	40 nC @ 10 V	150 V	±20V	1750 pF @ 50 V	-	-	D2PAK	-	144W (Tc)	-55°C ~ 175°C (TJ)
IRFS5615PBF MOSFET N-CH 150V 33A D2PAK Infineon Technologies	4,903	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	42mOhm @ 21A, 10V	Surface Mount	5V @ 100µA	40 nC @ 10 V	150 V	±20V	1750 pF @ 50 V	-	-	D2PAK	-	144W (Tc)	-55°C ~ 175°C (TJ)
IRLR3636PBF MOSFET N-CH 60V 50A DPAK Infineon Technologies	7,986	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	6.8mOhm @ 50A, 10V	Surface Mount	2.5V @ 100µA	49 nC @ 4.5 V	60 V	±16V	3779 pF @ 50 V	-	-	TO-252AA (DPAK)	-	143W (Tc)	-55°C ~ 175°C (TJ)
BSC0503NSIATMA1 MOSFET N-CH 30V 22A/88A TDSON Infineon Technologies	7,607	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta), 88A (Tc)	4.5V, 10V	3mOhm @ 30A, 10V	Surface Mount	2V @ 250µA	20 nC @ 10 V	30 V	±20V	1300 pF @ 15 V	-	-	PG-TDSON-8-6	-	2.5W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)
IRLS3034-7PPBF MOSFET N-CH 40V 240A D2PAK Infineon Technologies	7,219	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	4.5V, 10V	1.4mOhm @ 200A, 10V	Surface Mount	2.5V @ 250µA	180 nC @ 4.5 V	40 V	±20V	10990 pF @ 40 V	-	-	D2PAK (7-Lead)	-	380W (Tc)	-55°C ~ 175°C (TJ)
IRLS3034PBF MOSFET N-CH 40V 195A D2PAK Infineon Technologies	2,137	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	1.7mOhm @ 195A, 10V	Surface Mount	2.5V @ 250µA	162 nC @ 4.5 V	40 V	±20V	10315 pF @ 25 V	-	-	D2PAK	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRLS3036PBF MOSFET N-CH 60V 195A D2PAK Infineon Technologies	3,027	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	2.4mOhm @ 165A, 10V	Surface Mount	2.5V @ 250µA	140 nC @ 4.5 V	60 V	±16V	11210 pF @ 50 V	-	-	D2PAK	-	380W (Tc)	-55°C ~ 175°C (TJ)
IRLS4030-7PPBF MOSFET N-CH 100V 190A D2PAK Infineon Technologies	6,728	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	190A (Tc)	4.5V, 10V	3.9mOhm @ 110A, 10V	Surface Mount	2.5V @ 250µA	140 nC @ 4.5 V	100 V	±16V	11490 pF @ 50 V	-	-	D2PAK (7-Lead)	-	370W (Tc)	-55°C ~ 175°C (TJ)

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