Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 524

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPA70R600P7SXKSA1 MOSFET N-CH 700V 8.5A TO220 Infineon Technologies	9,108	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8.5A (Tc)	10V	600mOhm @ 1.8A, 10V	Through Hole	3.5V @ 90µA	10.5 nC @ 10 V	700 V	±16V	364 pF @ 400 V	-	-	PG-TO220-3-FP	-	25W (Tc)	-40°C ~ 150°C (TJ)
SPU03N60C3BKMA1 MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies	2,683	-	询价单	数据表	CoolMOS™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.2A (Tc)	10V	1.4Ohm @ 2A, 10V	Through Hole	3.9V @ 135µA	17 nC @ 10 V	650 V	±20V	400 pF @ 25 V	-	-	PG-TO251-3-21	-	38W (Tc)	-55°C ~ 150°C (TJ)
SPW07N60CFDFKSA1 MOSFET N-CH 650V 6.6A TO247-3 Infineon Technologies	5,105	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.6A (Tc)	10V	700mOhm @ 4.6A, 10V	Through Hole	5V @ 300µA	47 nC @ 10 V	650 V	±20V	790 pF @ 25 V	-	-	PG-TO247-3-1	-	83W (Tc)	-55°C ~ 150°C (TJ)
IRF1324SPBF MOSFET N-CH 24V 195A D2PAK Infineon Technologies	4,078	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	1.65mOhm @ 195A, 10V	Surface Mount	4V @ 250µA	240 nC @ 10 V	24 V	±20V	7590 pF @ 24 V	-	-	D2PAK	-	300W (Tc)	-55°C ~ 175°C (TJ)
IRF6218SPBF MOSFET P-CH 150V 27A D2PAK Infineon Technologies	3,954	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	150mOhm @ 16A, 10V	Surface Mount	5V @ 250µA	110 nC @ 10 V	150 V	±20V	2210 pF @ 25 V	-	-	D2PAK	-	250W (Tc)	-
IRF8734PBF MOSFET N-CH 30V 21A 8SO Infineon Technologies	5,535	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	21A (Ta)	4.5V, 10V	3.5mOhm @ 21A, 10V	Surface Mount	2.35V @ 50µA	30 nC @ 4.5 V	30 V	±20V	3175 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRFS3004-7PPBF MOSFET N-CH 40V 240A D2PAK Infineon Technologies	5,815	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	10V	1.25mOhm @ 195A, 10V	Surface Mount	4V @ 250µA	240 nC @ 10 V	40 V	±20V	9130 pF @ 25 V	-	-	D2PAK (7-Lead)	-	380W (Tc)	-55°C ~ 175°C (TJ)
IRFS3004PBF MOSFET N-CH 40V 195A D2PAK Infineon Technologies	2,470	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Ta)	10V	1.75mOhm @ 195A, 10V	Surface Mount	4V @ 250µA	240 nC @ 10 V	40 V	±20V	9200 pF @ 25 V	-	-	D2PAK	-	380W (Tc)	-55°C ~ 175°C (TJ)
IRFS4020PBF MOSFET N-CH 200V 18A D2PAK Infineon Technologies	8,907	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	105mOhm @ 11A, 10V	Surface Mount	4.9V @ 100µA	29 nC @ 10 V	200 V	±20V	1200 pF @ 50 V	-	-	D2PAK	-	100W (Tc)	-55°C ~ 175°C (TJ)
IRFS4115-7PPBF MOSFET N-CH 150V 105A D2PAK Infineon Technologies	3,123	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	105A (Tc)	10V	11.8mOhm @ 63A, 10V	Surface Mount	5V @ 250µA	110 nC @ 10 V	150 V	±20V	5320 pF @ 50 V	-	-	D2PAK (7-Lead)	-	380W (Tc)	-55°C ~ 175°C (TJ)

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