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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPI11N60CFDHKSA1MOSFET N-CH 650V 11A TO262-3 Infineon Technologies |
5,633 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | Through Hole | 5V @ 500µA | 64 nC @ 10 V | 650 V | ±20V | 1200 pF @ 25 V | - | - | PG-TO262-3-1 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPI15N60CFDHKSA1MOSFET N-CH 650V 13.4A TO262-3 Infineon Technologies |
9,184 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | Through Hole | 5V @ 750µA | 84 nC @ 10 V | 650 V | ±20V | 1820 pF @ 25 V | - | - | PG-TO262-3-1 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPI20N60CFDHKSA1MOSFET N-CH 650V 20.7A TO262-3 Infineon Technologies |
3,020 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | Through Hole | 5V @ 1mA | 124 nC @ 10 V | 650 V | ±20V | 2400 pF @ 25 V | - | - | PG-TO262-3-1 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
SPP07N60CFDHKSA1MOSFET N-CH 650V 6.6A TO220-3 Infineon Technologies |
9,548 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | Through Hole | 5V @ 300µA | 47 nC @ 10 V | 650 V | ±20V | 790 pF @ 25 V | - | - | PG-TO220-3-1 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP08P06PHXKSA1MOSFET P-CH 60V 8.8A TO220-3 Infineon Technologies |
4,682 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8.8A (Tc) | 10V | 300mOhm @ 6.2A, 10V | Through Hole | 4V @ 250µA | 15 nC @ 10 V | 60 V | ±20V | 420 pF @ 25 V | - | - | PG-TO220-3 | - | 42W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SPP15N65C3HKSA1MOSFET N-CH 650V 15A TO220-3 Infineon Technologies |
8,765 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | Through Hole | 3.9V @ 675µA | 63 nC @ 10 V | 650 V | ±20V | 1600 pF @ 25 V | - | - | PG-TO220-3-1 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP15P10PGHKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
3,782 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | Through Hole | 2.1V @ 1.54mA | 48 nC @ 10 V | 100 V | ±20V | 1280 pF @ 25 V | - | - | PG-TO220-3 | - | 128W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SPP15P10PLGHKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
6,613 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | Through Hole | 2V @ 1.54mA | 62 nC @ 10 V | 100 V | ±20V | 1490 pF @ 25 V | - | - | PG-TO220-3 | - | 128W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SPP24N60CFDHKSA1MOSFET N-CH 650V 21.7A TO220-3 Infineon Technologies |
3,722 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 21.7A (Tc) | 10V | 185mOhm @ 15.4A, 10V | Through Hole | 5V @ 1.2mA | 143 nC @ 10 V | 650 V | ±20V | 3160 pF @ 25 V | - | - | PG-TO220-3-1 | - | 240W (Tc) | -55°C ~ 150°C (TJ) |
|
SPS03N60C3BKMA1MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies |
4,770 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | Through Hole | 3.9V @ 135µA | 17 nC @ 10 V | 650 V | ±20V | 400 pF @ 25 V | - | - | PG-TO251-3-11 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
