富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP60R520CPXKSA1

IPP60R520CPXKSA1

MOSFET N-CH 650V 6.8A TO220-3

Infineon Technologies

8,396 -
IPP60R520CPXKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V Through Hole 3.5V @ 340µA 31 nC @ 10 V 650 V ±20V 630 pF @ 100 V - - PG-TO220-3 - 66W (Tc) -55°C ~ 150°C (TJ)
IPP60R600CPXKSA1

IPP60R600CPXKSA1

MOSFET N-CH 600V 6.1A TO220-3

Infineon Technologies

6,350 -
IPP60R600CPXKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V Through Hole 3.5V @ 220µA 27 nC @ 10 V 600 V ±20V 550 pF @ 100 V - - PG-TO220-3 - 60W (Tc) -55°C ~ 150°C (TJ)
IPP70N04S307AKSA1

IPP70N04S307AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

4,565 -
IPP70N04S307AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 6.5mOhm @ 70A, 10V Through Hole 4V @ 50µA 40 nC @ 10 V 40 V ±20V 2700 pF @ 25 V - - PG-TO220-3-1 - 79W (Tc) -55°C ~ 175°C (TJ)
IPP70N10S312AKSA1

IPP70N10S312AKSA1

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies

9,776 -
IPP70N10S312AKSA1

数据表

OptiMOS™ T TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 11.6mOhm @ 70A, 10V Through Hole 4V @ 83µA 66 nC @ 10 V 100 V ±20V 4355 pF @ 25 V - - PG-TO220-3-1 - 125W (Tc) -55°C ~ 175°C (TJ)
IPP70N10SL16AKSA1

IPP70N10SL16AKSA1

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies

9,185 -
IPP70N10SL16AKSA1

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V Through Hole 2V @ 2mA 240 nC @ 10 V 100 V ±20V 4540 pF @ 25 V - - PG-TO220-3-1 - 250W (Tc) -55°C ~ 175°C (TJ)
IPP77N06S212AKSA1

IPP77N06S212AKSA1

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies

6,597 -
IPP77N06S212AKSA1

数据表

OptiMOS™ TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 77A (Tc) 10V 12mOhm @ 38A, 10V Through Hole 4V @ 93µA 60 nC @ 10 V 55 V ±20V 1770 pF @ 25 V - - PG-TO220-3-1 - 158W (Tc) -55°C ~ 175°C (TJ)
IPP80N03S4L04AKSA1

IPP80N03S4L04AKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

3,431 -
IPP80N03S4L04AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V Through Hole 2.2V @ 45µA 75 nC @ 10 V 30 V ±16V 5100 pF @ 25 V - - PG-TO220-3-1 - 94W (Tc) -55°C ~ 175°C (TJ)
IPA105N15N3GXKSA1

IPA105N15N3GXKSA1

MOSFET N-CH 150V 37A TO220-FP

Infineon Technologies

9,619 -
IPA105N15N3GXKSA1

数据表

OptiMOS™ TO-220-3 Full Pack Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 37A (Tc) 8V, 10V 10.5mOhm @ 37A, 10V Through Hole 4V @ 160µA 55 nC @ 10 V 150 V ±20V 4300 pF @ 75 V - - PG-TO220-FP - 40.5W (Tc) -55°C ~ 175°C (TJ)
ISC030N12NM6ATMA1

ISC030N12NM6ATMA1

OPTIMOS 6 POWER-TRANSISTOR,120V

Infineon Technologies

14 -
ISC030N12NM6ATMA1

数据表

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 194A (Tc) 8V, 10V 3.04mOhm @ 50A, 10V Surface Mount 3.6V @ 141µA 74 nC @ 10 V 120 V ±20V 5500 pF @ 60 V - - PG-TSON-8-3 - 3W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
IPF019N12NM6ATMA1

IPF019N12NM6ATMA1

TRENCH >=100V

Infineon Technologies

2,021 -
IPF019N12NM6ATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户