Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 515

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPI80N04S306AKSA1 MOSFET N-CH 40V 80A TO262-3 Infineon Technologies	5,278	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.7mOhm @ 80A, 10V	Through Hole	4V @ 52µA	47 nC @ 10 V	40 V	±20V	3250 pF @ 25 V	-	-	PG-TO262-3	-	100W (Tc)	-55°C ~ 175°C (TJ)
IPI80N06S208AKSA1 MOSFET N-CH 55V 80A TO262-3 Infineon Technologies	3,676	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8mOhm @ 58A, 10V	Through Hole	4V @ 150µA	96 nC @ 10 V	55 V	±20V	2860 pF @ 25 V	-	-	PG-TO262-3	-	215W (Tc)	-55°C ~ 175°C (TJ)
IPI80N06S2L05AKSA1 MOSFET N-CH 55V 80A TO262-3 Infineon Technologies	8,546	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	4.8mOhm @ 80A, 10V	Through Hole	2V @ 250µA	230 nC @ 10 V	55 V	±20V	5700 pF @ 25 V	-	-	PG-TO262-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPI80N06S2L11AKSA1 MOSFET N-CH 55V 80A TO262-3 Infineon Technologies	5,704	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	11mOhm @ 60A, 10V	Through Hole	2V @ 93µA	80 nC @ 10 V	55 V	±20V	2075 pF @ 25 V	-	-	PG-TO262-3	-	158W (Tc)	-55°C ~ 175°C (TJ)
IPI90R1K0C3XKSA1 MOSFET N-CH 900V 5.7A TO262-3 Infineon Technologies	8,881	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.7A (Tc)	10V	1Ohm @ 3.3A, 10V	Through Hole	3.5V @ 370µA	34 nC @ 10 V	900 V	±20V	850 pF @ 100 V	-	-	PG-TO262-3	-	89W (Tc)	-55°C ~ 150°C (TJ)
IPI90R1K2C3XKSA1 MOSFET N-CH 900V 5.1A TO262-3 Infineon Technologies	9,293	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.1A (Tc)	10V	1.2Ohm @ 2.8A, 10V	Through Hole	3.5V @ 310µA	28 nC @ 10 V	900 V	±20V	710 pF @ 100 V	-	-	PG-TO262-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IRFU024NPBFAKLA1 MOSFET N-CH Infineon Technologies	7,668	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	75mOhm @ 10A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	55 V	±20V	370 pF @ 25 V	-	-	IPAK (TO-251AA)	-	45W (Tc)	-55°C ~ 175°C (TJ)
IAUCN04S7L005ATMA1 MOSFET_(20V 40V) Infineon Technologies	7,891	-	询价单	数据表	OptiMOS™ 7	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	430A (Tj)	4.5V, 10V	0.52mOhm @ 88A, 10V	Surface Mount	1.8V @ 95µA	141 nC @ 10 V	40 V	±16V	9415 pF @ 20 V	AEC-Q101	-	PG-TDSON-8-43	Automotive	179W (Tc)	-55°C ~ 175°C (TJ)
IPU80R600P7AKMA1 MOSFET N-CH 800V 8A TO251-3 Infineon Technologies	3,585	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	600mOhm @ 3.4A, 10V	Through Hole	3.5V @ 170µA	20 nC @ 10 V	800 V	±20V	570 pF @ 500 V	-	-	PG-TO251-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
IRL3705NPBF MOSFET N-CH 55V 89A TO220AB Infineon Technologies	6,830	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	89A (Tc)	4V, 10V	10mOhm @ 46A, 10V	Through Hole	2V @ 250µA	98 nC @ 5 V	55 V	±16V	3600 pF @ 25 V	-	-	TO-220AB	-	170W (Tc)	-55°C ~ 175°C (TJ)

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