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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPP11N60C3XKSA1MOSFET N-CH 650V 11A TO220-3 Infineon Technologies |
4 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | Through Hole | 3.9V @ 500µA | 60 nC @ 10 V | 650 V | ±20V | 1200 pF @ 25 V | - | - | PG-TO220-3-1 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
IPI90R340C3XKSA1MOSFET N-CH 900V 15A TO262-3 Infineon Technologies |
9,824 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | Through Hole | 3.5V @ 1mA | 94 nC @ 10 V | 900 V | ±20V | 2400 pF @ 100 V | - | - | PG-TO262-3 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPI90R500C3XKSA1MOSFET N-CH 900V 11A TO262-3 Infineon Technologies |
3,242 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | Through Hole | 3.5V @ 740µA | 68 nC @ 10 V | 900 V | ±20V | 1700 pF @ 100 V | - | - | PG-TO262-3 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPI90R800C3XKSA1MOSFET N-CH 900V 6.9A TO262-3 Infineon Technologies |
8,739 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | Through Hole | 3.5V @ 460µA | 42 nC @ 10 V | 900 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO262-3 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP06CN10LGXKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
7,969 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 6.2mOhm @ 100A, 10V | Through Hole | 2.4V @ 180µA | 124 nC @ 10 V | 100 V | ±20V | 11900 pF @ 50 V | - | - | PG-TO220-3 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP070N08N3 GMOSFET N-CH 80V 80A TO220-3 Infineon Technologies |
3,628 | - |
|
数据表 |
OptiMOS™ 3 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 6V, 10V | 7mOhm @ 73A, 10V | Through Hole | 3.5V @ 73µA | 56 nC @ 10 V | 80 V | ±20V | 3840 pF @ 40 V | - | - | PG-TO220-3 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP093N06N3GXKSA1MOSFET N-CH 60V 50A TO220-3 Infineon Technologies |
8,235 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | Through Hole | 4V @ 34µA | 36 nC @ 10 V | 60 V | ±20V | 2900 pF @ 30 V | - | - | PG-TO220-3 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP100N04S204AKSA1MOSFET N-CH 40V 100A TO220-3 Infineon Technologies |
4,290 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 172 nC @ 10 V | 40 V | ±20V | 5300 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP100N06S2L05AKSA1MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
2,745 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | Through Hole | 2V @ 250µA | 230 nC @ 10 V | 55 V | ±20V | 5660 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP139N08N3 GMOSFET N-CH 80V 45A TO220-3 Infineon Technologies |
6,857 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 6V, 10V | 13.9mOhm @ 45A, 10V | Through Hole | 3.5V @ 33µA | 25 nC @ 10 V | 80 V | ±20V | 1730 pF @ 40 V | - | - | PG-TO220-3 | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
