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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP22N03S4L15AKSA1MOSFET N-CH 30V 22A TO220-3 Infineon Technologies |
8,049 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 4.5V, 10V | 14.9mOhm @ 22A, 10V | Through Hole | 2.2V @ 10µA | 14 nC @ 10 V | 30 V | ±16V | 980 pF @ 25 V | - | - | PG-TO220-3-1 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
|
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IPP230N06L3 GMOSFET N-CH 60V 30A TO220-3 Infineon Technologies |
9,677 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | Through Hole | 2.2V @ 11µA | 10 nC @ 4.5 V | 60 V | ±20V | 1600 pF @ 30 V | - | - | PG-TO220-3 | - | 36W (Tc) | -55°C ~ 175°C (TJ) |
|
ISCH42N04LM7ATMA1ISCH42N04LM7ATMA1 Infineon Technologies |
5,881 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 61A (Ta), 541A (Tc) | 4.5V, 10V | 0.42mOhm @ 50A, 10V | Surface Mount | 1.8V @ 130µA | 207 nC @ 10 V | 40 V | ±20V | 13000 pF @ 20 V | - | - | PG-TDSON-8 | - | 3W (Ta), 234W (Tc) | -55°C ~ 175°C (TJ) |
|
IPL60R199CPAUMA1MOSFET N-CH 600V 16.4A 4VSON Infineon Technologies |
4 | - |
|
数据表 |
CoolMOS™ CP | 4-PowerTSFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 16.4A (Tc) | 10V | 199mOhm @ 9.9A, 10V | Surface Mount | 3.5V @ 660µA | 32 nC @ 10 V | 600 V | ±20V | 1520 pF @ 100 V | - | - | PG-VSON-4 | - | 139W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IMBG65R260M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
5,294 | - |
|
数据表 |
CoolSIC™ M1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 6A (Tc) | 18V | 346mOhm @ 3.6A, 18V | Surface Mount | 5.7V @ 1.1mA | 6 nC @ 18 V | 650 V | +23V, -5V | 201 pF @ 400 V | - | - | PG-TO263-7-12 | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
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|
IPP260N06N3GXKSA1MOSFET N-CH 60V 27A TO220-3 Infineon Technologies |
6,237 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 26mOhm @ 27A, 10V | Through Hole | 4V @ 11µA | 15 nC @ 10 V | 60 V | ±20V | 1200 pF @ 30 V | - | - | PG-TO220-3 | - | 36W (Tc) | -55°C ~ 175°C (TJ) |
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IPP47N10S33AKSA1MOSFET N-CH 100V 47A TO220-3 Infineon Technologies |
8,156 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | Through Hole | 4V @ 2mA | 105 nC @ 10 V | 100 V | ±20V | 2500 pF @ 25 V | - | - | PG-TO220-3-1 | - | 175W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP50R140CPHKSA1MOSFET N-CH 550V 23A TO220-3 Infineon Technologies |
4,071 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | Through Hole | 3.5V @ 930µA | 64 nC @ 10 V | 550 V | ±20V | 2540 pF @ 100 V | - | - | PG-TO220-3-1 | - | 192W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP50R399CPHKSA1MOSFET N-CH 560V 9A TO220-3 Infineon Technologies |
9,884 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | Through Hole | 3.5V @ 330µA | 23 nC @ 10 V | 560 V | ±20V | 890 pF @ 100 V | - | - | PG-TO220-3-1 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
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|
IPP50R520CPHKSA1MOSFET N-CH 550V 7.1A TO220-3 Infineon Technologies |
3,210 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | Through Hole | 3.5V @ 250µA | 17 nC @ 10 V | 550 V | ±20V | 680 pF @ 100 V | - | - | PG-TO220-3-1 | - | 66W (Tc) | -55°C ~ 150°C (TJ) |
