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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPW60R017C7XKSA1HIGH POWER_NEW Infineon Technologies |
8,912 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 109A (Tc) | 10V | 17mOhm @ 58.2A, 10V | Through Hole | 4V @ 2.91mA | 240 nC @ 10 V | 600 V | ±20V | 9890 pF @ 400 V | - | - | PG-TO247-3-41 | - | 446W (Tc) | -55°C ~ 150°C (TJ) |
|
IMW65R015M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
9,863 | - |
|
数据表 |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 93A (Tc) | 15V, 20V | 13.2mOhm @ 64.2A, 20V | Through Hole | 5.6V @ 13mA | 79 nC @ 18 V | 650 V | +23V, -7V | 2792 pF @ 400 V | - | - | PG-TO247-3-40 | - | 341W (Tc) | -55°C ~ 175°C (TJ) |
|
IPS12CN10LGBKMA1MOSFET N-CH 100V 69A TO251-3 Infineon Technologies |
8,384 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 69A (Tc) | 4.5V, 10V | 11.8mOhm @ 69A, 10V | Through Hole | 2.4V @ 83µA | 58 nC @ 10 V | 100 V | ±20V | 5600 pF @ 50 V | - | - | PG-TO251-3-11 | - | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
IPU135N08N3 GMOSFET N-CH 80V 50A TO251-3 Infineon Technologies |
9,526 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 6V, 10V | 13.5mOhm @ 50A, 10V | Through Hole | 3.5V @ 33µA | 25 nC @ 10 V | 80 V | ±20V | 1730 pF @ 40 V | - | - | PG-TO251-3 | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
IPW50R199CPFKSA1MOSFET N-CH 550V 17A TO247-3 Infineon Technologies |
4,478 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | Through Hole | 3.5V @ 660µA | 45 nC @ 10 V | 550 V | ±20V | 1800 pF @ 100 V | - | - | PG-TO247-3-1 | - | 139W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW50R299CPFKSA1MOSFET N-CH 550V 12A TO247-3 Infineon Technologies |
7,813 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | Through Hole | 3.5V @ 440µA | 31 nC @ 10 V | 550 V | ±20V | 1190 pF @ 100 V | - | - | PG-TO247-3-1 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW50R350CPFKSA1MOSFET N-CH 550V 10A TO247-3 Infineon Technologies |
7,630 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | Through Hole | 3.5V @ 370µA | 25 nC @ 10 V | 550 V | ±20V | 1020 pF @ 100 V | - | - | PG-TO247-3-1 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GS66508B-MRGS66508B-MR Infineon Technologies Canada Inc. |
2,832 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | Surface Mount | 2.6V @ 7mA | 6.1 nC @ 6 V | 650 V | +7V, -10V | 242 pF @ 400 V | - | - | Die | - | - | -55°C ~ 150°C (TJ) |
|
|
IPW60R250CPMOSFET N-CH 650V 12A TO247-3 Infineon Technologies |
4,711 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | Through Hole | 3.5V @ 440µA | 35 nC @ 10 V | 650 V | ±20V | 1200 pF @ 100 V | - | - | PG-TO247-3-1 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW90R1K0C3FKSA1MOSFET N-CH 900V 5.7A TO247-3 Infineon Technologies |
6,665 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | Through Hole | 3.5V @ 370µA | 34 nC @ 10 V | 900 V | ±20V | 850 pF @ 100 V | - | - | PG-TO247-3-1 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
