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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IMZA65R040M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
5,430 | - |
|
数据表 |
CoolSiC™ Gen 2 | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 46A (Tc) | 15V, 20V | 36mOhm @ 22.9A, 20V | Through Hole | 5.6V @ 4.6mA | 28 nC @ 18 V | 650 V | +23V, -7V | 997 pF @ 400 V | - | - | PG-TO247-4-8 | - | 172W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP80N04S204AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
3,364 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 170 nC @ 10 V | 40 V | ±20V | 5300 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N04S2H4AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
4,528 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 4mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 148 nC @ 10 V | 40 V | ±20V | 4400 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N04S3-04MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
2,548 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | Through Hole | 4V @ 90µA | 80 nC @ 10 V | 40 V | ±20V | 5200 pF @ 25 V | - | - | PG-TO220-3-1 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S205AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
5,156 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.1mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 170 nC @ 10 V | 55 V | ±20V | 5110 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S208AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
8,136 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | Through Hole | 4V @ 150µA | 96 nC @ 10 V | 55 V | ±20V | 2860 pF @ 25 V | - | - | PG-TO220-3-1 | - | 215W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S209AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
7,214 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | Through Hole | 4V @ 125µA | 80 nC @ 10 V | 55 V | ±20V | 2360 pF @ 25 V | - | - | PG-TO220-3-1 | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S2H5AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
9,663 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | Through Hole | 4V @ 230µA | 155 nC @ 10 V | 55 V | ±20V | 4400 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S2L-07MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
8,671 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | Through Hole | 2V @ 150µA | 130 nC @ 10 V | 55 V | ±20V | 3160 pF @ 25 V | - | - | PG-TO220-3-1 | - | 210W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S2L09AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
4,368 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | Through Hole | 2V @ 125µA | 105 nC @ 10 V | 55 V | ±20V | 2620 pF @ 25 V | - | - | PG-TO220-3-1 | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
