Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 514

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPI100N08S207AKSA1 MOSFET N-CH 75V 100A TO262-3 Infineon Technologies	9,974	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	7.1mOhm @ 80A, 10V	Through Hole	4V @ 250µA	200 nC @ 10 V	75 V	±20V	4700 pF @ 25 V	-	-	PG-TO262-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPI139N08N3GHKSA1 MOSFET N-CH 80V 45A TO262-3 Infineon Technologies	4,294	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	6V, 10V	13.9mOhm @ 45A, 10V	Through Hole	3.5V @ 33µA	25 nC @ 10 V	80 V	±20V	1730 pF @ 40 V	-	-	PG-TO262-3	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPI200N15N3 G MOSFET N-CH 150V 50A TO262-3 Infineon Technologies	5,550	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	8V, 10V	20mOhm @ 50A, 10V	Through Hole	4V @ 90µA	31 nC @ 10 V	150 V	±20V	1820 pF @ 75 V	-	-	PG-TO262-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPI22N03S4L15AKSA1 MOSFET N-CH 30V 22A TO262-3 Infineon Technologies	4,867	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	4.5V, 10V	14.9mOhm @ 22A, 10V	Through Hole	2.2V @ 10µA	14 nC @ 10 V	30 V	±16V	980 pF @ 25 V	-	-	PG-TO262-3	-	31W (Tc)	-55°C ~ 175°C (TJ)
IPI50CN10NGHKSA1 MOSFET N-CH 100V 20A TO262-3 Infineon Technologies	5,686	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	50mOhm @ 20A, 10V	Through Hole	4V @ 20µA	16 nC @ 10 V	100 V	±20V	1090 pF @ 50 V	-	-	PG-TO262-3	-	44W (Tc)	-55°C ~ 175°C (TJ)
IPI50R399CPXKSA1 MOSFET N-CH 500V 9A TO262-3 Infineon Technologies	3,831	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	399mOhm @ 4.9A, 10V	Through Hole	3.5V @ 330µA	23 nC @ 10 V	500 V	±20V	890 pF @ 100 V	-	-	PG-TO262-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPI60R520CPAKSA1 MOSFET N-CH 600V 6.8A TO262-3 Infineon Technologies	8,095	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	10V	520mOhm @ 3.8A, 10V	Through Hole	3.5V @ 340µA	31 nC @ 10 V	600 V	±20V	630 pF @ 100 V	-	-	PG-TO262-3	-	66W (Tc)	-55°C ~ 150°C (TJ)
IPI70N04S307AKSA1 MOSFET N-CH 40V 80A TO262-3 Infineon Technologies	2,985	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	6.5mOhm @ 70A, 10V	Through Hole	4V @ 50µA	40 nC @ 10 V	40 V	±20V	2700 pF @ 25 V	-	-	PG-TO262-3	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPI70N10S312AKSA1 MOSFET N-CH 100V 70A TO262-3 Infineon Technologies	4,638	-	询价单	数据表	OptiMOS™ T	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	11.6mOhm @ 70A, 10V	Through Hole	4V @ 83µA	66 nC @ 10 V	100 V	±20V	4355 pF @ 25 V	-	-	PG-TO262-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
IPI80N03S4L03AKSA1 MOSFET N-CH 30V 80A TO262-3 Infineon Technologies	4,239	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	2.7mOhm @ 80A, 10V	Through Hole	2.2V @ 90µA	140 nC @ 10 V	30 V	±16V	9750 pF @ 25 V	-	-	PG-TO262-3	-	136W (Tc)	-55°C ~ 175°C (TJ)

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