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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP80N06S2L11AKSA1

IPP80N06S2L11AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

9,829 -
IPP80N06S2L11AKSA1

数据表

OptiMOS™ TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 11mOhm @ 60A, 10V Through Hole 2V @ 93µA 80 nC @ 10 V 55 V ±20V 2075 pF @ 25 V - - PG-TO220-3-1 - 158W (Tc) -55°C ~ 175°C (TJ)
IPP80N06S2LH5AKSA1

IPP80N06S2LH5AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

2,040 -
IPP80N06S2LH5AKSA1

数据表

OptiMOS™ 3 TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V Through Hole 2V @ 250µA 190 nC @ 10 V 55 V ±20V 5000 pF @ 25 V - - PG-TO220-3-1 - 300W (Tc) -55°C ~ 175°C (TJ)
IPP80N08S2L07AKSA1

IPP80N08S2L07AKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies

2,714 -
IPP80N08S2L07AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 7.1mOhm @ 80A, 10V Through Hole 2V @ 250µA 233 nC @ 10 V 75 V ±20V 5400 pF @ 25 V - - PG-TO220-3-1 - 300W (Tc) -55°C ~ 175°C (TJ)
IPP90R1K0C3XKSA1

IPP90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO220-3

Infineon Technologies

5,451 -
IPP90R1K0C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V Through Hole 3.5V @ 370µA 34 nC @ 10 V 900 V ±20V 850 pF @ 100 V - - PG-TO220-3-1 - 89W (Tc) -55°C ~ 150°C (TJ)
IPP90R1K2C3XKSA1

IPP90R1K2C3XKSA1

MOSFET N-CH 900V 5.1A TO220-3

Infineon Technologies

9,115 -
IPP90R1K2C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V Through Hole 3.5V @ 310µA 28 nC @ 10 V 900 V ±20V 710 pF @ 100 V - - PG-TO220-3 - 83W (Tc) -55°C ~ 150°C (TJ)
IPDQ65R029CFD7AXTMA1

IPDQ65R029CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

5 -
IPDQ65R029CFD7AXTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 85A (Tc) 10V 29mOhm @ 35.8A, 10V Surface Mount 4.5V @ 1.79mA 139 nC @ 10 V 650 V ±20V 7149 pF @ 400 V AEC-Q101 - PG-HDSOP-22-1 Automotive 463W (Tc) -40°C ~ 150°C (TJ)
IPW60R016CM8XKSA1

IPW60R016CM8XKSA1

IPW60R016CM8XKSA1

Infineon Technologies

4,562 -
IPW60R016CM8XKSA1

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 123A (Tc) 10V 16mOhm @ 62.5A, 10V Through Hole 4.7V @ 1.48mA 171 nC @ 10 V 600 V ±20V 7545 pF @ 400 V - - PG-TO247-3-U06 - 521W (Tc) -55°C ~ 150°C (TJ)
IPP90R340C3XKSA1

IPP90R340C3XKSA1

MOSFET N-CH 900V 15A TO220-3

Infineon Technologies

3,221 -
IPP90R340C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 340mOhm @ 9.2A, 10V Through Hole 3.5V @ 1mA 94 nC @ 10 V 900 V ±20V 2400 pF @ 100 V - - PG-TO220-3 - 208W (Tc) -55°C ~ 150°C (TJ)
IPP90R500C3XKSA1

IPP90R500C3XKSA1

MOSFET N-CH 900V 11A TO220-3

Infineon Technologies

2,759 -
IPP90R500C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 500mOhm @ 6.6A, 10V Through Hole 3.5V @ 740µA 68 nC @ 10 V 900 V ±20V 1700 pF @ 100 V - - PG-TO220-3-1 - 156W (Tc) -55°C ~ 150°C (TJ)
IPP90R800C3XKSA1

IPP90R800C3XKSA1

MOSFET N-CH 900V 6.9A TO220-3

Infineon Technologies

2,132 -
IPP90R800C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V Through Hole 3.5V @ 460µA 42 nC @ 10 V 900 V ±20V 1100 pF @ 100 V - - PG-TO220-3-1 - 104W (Tc) -55°C ~ 150°C (TJ)
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