Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 513

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD80N06S3-09 MOSFET N-CH 55V 80A TO252-3 Infineon Technologies	7,665	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8.4mOhm @ 40A, 10V	Surface Mount	4V @ 55µA	88 nC @ 10 V	55 V	±20V	6100 pF @ 25 V	-	-	PG-TO252-3-11	-	107W (Tc)	-55°C ~ 175°C (TJ)
IPD90P03P4L04ATMA1 MOSFET P-CH 30V 90A TO252-3 Infineon Technologies	9,691	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	4.1mOhm @ 90A, 10V	Surface Mount	2V @ 253µA	160 nC @ 10 V	30 V	+5V, -16V	11300 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	137W (Tc)	-55°C ~ 175°C (TJ)
IPI024N06N3GHKSA1 MOSFET N-CH 60V 120A TO262-3 Infineon Technologies	7,462	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.4mOhm @ 100A, 10V	Through Hole	4V @ 196µA	275 nC @ 10 V	60 V	±20V	23000 pF @ 30 V	-	-	PG-TO262-3	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPI028N08N3GHKSA1 MOSFET N-CH 80V 100A TO262-3 Infineon Technologies	6,235	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	2.8mOhm @ 100A, 10V	Through Hole	3.5V @ 270µA	206 nC @ 10 V	80 V	±20V	14200 pF @ 40 V	-	-	PG-TO262-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPI030N10N3GHKSA1 MOSFET N-CH 100V 100A TO262-3 Infineon Technologies	6,793	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3mOhm @ 100A, 10V	Through Hole	3.5V @ 275µA	206 nC @ 10 V	100 V	±20V	14800 pF @ 50 V	-	-	PG-TO262-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPI032N06N3 G MOSFET N-CH 60V 120A TO262-3 Infineon Technologies	5,260	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	3.2mOhm @ 100A, 10V	Through Hole	4V @ 118µA	165 nC @ 10 V	60 V	±20V	13000 pF @ 30 V	-	-	PG-TO262-3	-	188W (Tc)	-55°C ~ 175°C (TJ)
IPI037N06L3GHKSA1 MOSFET N-CH 60V 90A TO262-3 Infineon Technologies	3,919	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	3.7mOhm @ 90A, 10V	Through Hole	2.2V @ 93µA	79 nC @ 4.5 V	60 V	±20V	13000 pF @ 30 V	-	-	PG-TO262-3	-	167W (Tc)	-55°C ~ 175°C (TJ)
IPI037N08N3GHKSA1 MOSFET N-CH 80V 100A TO262-3 Infineon Technologies	9,817	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3.75mOhm @ 100A, 10V	Through Hole	3.5V @ 155µA	117 nC @ 10 V	80 V	±20V	8110 pF @ 40 V	-	-	PG-TO262-3	-	214W (Tc)	-55°C ~ 175°C (TJ)
IPI040N06N3GHKSA1 MOSFET N-CH 60V 90A TO262-3 Infineon Technologies	3,328	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	4mOhm @ 90A, 10V	Through Hole	4V @ 90µA	98 nC @ 10 V	60 V	±20V	11000 pF @ 30 V	-	-	PG-TO262-3	-	188W (Tc)	-55°C ~ 175°C (TJ)
IPI100N08N3GHKSA1 MOSFET N-CH 80V 70A TO262-3 Infineon Technologies	9,192	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	6V, 10V	10mOhm @ 46A, 10V	Through Hole	3.5V @ 46µA	35 nC @ 10 V	80 V	±20V	2410 pF @ 40 V	-	-	PG-TO262-3	-	100W (Tc)	-55°C ~ 175°C (TJ)

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