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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPI60R199CPXKSA1MOSFET N-CH 600V 16A TO262-3 Infineon Technologies |
8,641 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | Through Hole | 3.5V @ 660µA | 43 nC @ 10 V | 600 V | ±20V | 1520 pF @ 100 V | - | - | PG-TO262-3 | - | 139W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPI80N06S3-05MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
5,735 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.4mOhm @ 63A, 10V | Through Hole | 4V @ 110µA | 240 nC @ 10 V | 55 V | ±20V | 10760 pF @ 25 V | - | - | PG-TO262-3 | - | 165W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPI80N06S3-07MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
8,750 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | Through Hole | 4V @ 80µA | 170 nC @ 10 V | 55 V | ±20V | 7768 pF @ 25 V | - | - | PG-TO262-3 | - | 135W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPI80N06S3L06XKMOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
8,545 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 5V, 10V | 5.9mOhm @ 56A, 10V | Through Hole | 2.2V @ 80µA | 196 nC @ 10 V | 55 V | ±16V | 9417 pF @ 25 V | - | - | PG-TO262-3 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPI80N06S3L-08MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
6,476 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 5V, 10V | 7.9mOhm @ 43A, 10V | Through Hole | 2.2V @ 55µA | 134 nC @ 10 V | 55 V | ±16V | 6475 pF @ 25 V | - | - | PG-TO262-3 | - | 105W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP03N03LB GMOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
4,746 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 55A, 10V | Through Hole | 2V @ 100µA | 59 nC @ 5 V | 30 V | ±20V | 7624 pF @ 15 V | - | - | PG-TO220-3-1 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP048N06L GMOSFET N-CH 60V 100A TO220-3 Infineon Technologies |
2,304 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 100A, 10V | Through Hole | 2V @ 270µA | 225 nC @ 10 V | 60 V | ±20V | 7600 pF @ 30 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP04N03LB GMOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
3,283 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 3.8mOhm @ 55A, 10V | Through Hole | 2V @ 70µA | 40 nC @ 5 V | 30 V | ±20V | 5203 pF @ 15 V | - | - | PG-TO220-3-1 | - | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP050N06N GMOSFET N-CH 60V 100A TO220-3 Infineon Technologies |
7,501 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 5mOhm @ 100A, 10V | Through Hole | 4V @ 270µA | 167 nC @ 10 V | 60 V | ±20V | 6100 pF @ 30 V | - | - | PG-TO220-3 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP05N03LB GMOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
9,658 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 5.3mOhm @ 60A, 10V | Through Hole | 2V @ 40µA | 25 nC @ 5 V | 30 V | ±20V | 3209 pF @ 15 V | - | - | PG-TO220-3-1 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
