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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP77N06S3-09MOSFET N-CH 55V 77A TO220-3 Infineon Technologies |
5,484 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 77A (Tc) | 10V | 9.1mOhm @ 39A, 10V | Through Hole | 4V @ 55µA | 103 nC @ 10 V | 55 V | ±20V | 5335 pF @ 25 V | - | - | PG-TO220-3-1 | - | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80CN10NGHKSA1MOSFET N-CH 100V 13A TO220-3 Infineon Technologies |
4,373 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 80mOhm @ 13A, 10V | Through Hole | 4V @ 12µA | 11 nC @ 10 V | 100 V | ±20V | 716 pF @ 50 V | - | - | PG-TO220-3 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S3-05MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
3,413 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.4mOhm @ 63A, 10V | Through Hole | 4V @ 110µA | 240 nC @ 10 V | 55 V | ±20V | 10760 pF @ 25 V | - | - | PG-TO220-3-1 | - | 165W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S3-07MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
9,947 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | Through Hole | 4V @ 80µA | 170 nC @ 10 V | 55 V | ±20V | 7768 pF @ 25 V | - | - | PG-TO220-3-1 | - | 135W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S3L-05MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
5,497 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 5V, 10V | 4.8mOhm @ 69A, 10V | Through Hole | 2.2V @ 115µA | 273 nC @ 10 V | 55 V | ±16V | 13060 pF @ 25 V | - | - | PG-TO220-3-1 | - | 165W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S3L-06MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
3,644 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 5V, 10V | 5.9mOhm @ 56A, 10V | Through Hole | 2.2V @ 80µA | 196 nC @ 10 V | 55 V | ±16V | 9417 pF @ 25 V | - | - | PG-TO220-3-1 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP80N06S3L-08MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
7,730 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 5V, 10V | 7.9mOhm @ 43A, 10V | Through Hole | 2.2V @ 55µA | 134 nC @ 10 V | 55 V | ±16V | 6475 pF @ 25 V | - | - | PG-TO220-3-1 | - | 105W (Tc) | -55°C ~ 175°C (TJ) |
|
IPS04N03LA GMOSFET N-CH 25V 50A TO251-3 Infineon Technologies |
9,720 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | Through Hole | 2V @ 80µA | 41 nC @ 5 V | 25 V | ±20V | 5199 pF @ 15 V | - | - | PG-TO251-3-11 | - | 115W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPS06N03LA GMOSFET N-CH 25V 50A TO251-3 Infineon Technologies |
7,409 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | Through Hole | 2V @ 40µA | 22 nC @ 5 V | 25 V | ±20V | 2653 pF @ 15 V | - | - | PG-TO251-3-11 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPS09N03LA GMOSFET N-CH 25V 50A TO251-3 Infineon Technologies |
5,884 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 8.8mOhm @ 30A, 10V | Through Hole | 2V @ 20µA | 13 nC @ 5 V | 25 V | ±20V | 1642 pF @ 15 V | - | - | PG-TO251-3-11 | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
