Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 456

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB03N03LB MOSFET N-CH 30V 80A D2PAK Infineon Technologies	2,433	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	2.8mOhm @ 55A, 10V	Surface Mount	2V @ 100µA	59 nC @ 5 V	30 V	±20V	7624 pF @ 15 V	-	-	PG-TO263-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPB04N03LB MOSFET N-CH 30V 80A D2PAK Infineon Technologies	8,463	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.5mOhm @ 55A, 10V	Surface Mount	2V @ 70µA	40 nC @ 5 V	30 V	±20V	5203 pF @ 15 V	-	-	PG-TO263-3	-	107W (Tc)	-55°C ~ 175°C (TJ)
IPB06N03LA G MOSFET N-CH 25V 50A TO263-3 Infineon Technologies	9,018	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	5.9mOhm @ 30A, 10V	Surface Mount	2V @ 40µA	22 nC @ 5 V	25 V	±20V	2653 pF @ 15 V	-	-	PG-TO263-3-2	-	83W (Tc)	-55°C ~ 175°C (TJ)
IPB06N03LB G MOSFET N-CH 30V 50A D2PAK Infineon Technologies	9,700	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	6.3mOhm @ 50A, 10V	Surface Mount	2V @ 40µA	22 nC @ 5 V	30 V	±20V	2782 pF @ 15 V	-	-	PG-TO263-3	-	83W (Tc)	-55°C ~ 175°C (TJ)
IPB070N06N G MOSFET N-CHAN D2PAK Infineon Technologies	3,447	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	-	6.7mOhm @ 80A, 10V	Surface Mount	4V @ 180µA	126 nC @ 10 V	60 V	-	4300 pF @ 30 V	-	-	PG-TO263-3	-	-	-
IPB091N06N G MOSFET N-CHAN D2PAK Infineon Technologies	2,136	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	-	8.8mOhm @ 80A, 10V	Surface Mount	4V @ 130µA	81 nC @ 10 V	60 V	-	2800 pF @ 30 V	-	-	PG-TO263-3	-	-	-
IPB09N03LA G MOSFET N-CH 25V 50A TO263-3 Infineon Technologies	6,341	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	8.9mOhm @ 30A, 10V	Surface Mount	2V @ 20µA	13 nC @ 5 V	25 V	±20V	1642 pF @ 15 V	-	-	PG-TO263-3-2	-	63W (Tc)	-55°C ~ 175°C (TJ)
IPB100N06S3-03 MOSFET N-CH 55V 100A TO263-3 Infineon Technologies	7,295	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3mOhm @ 80A, 10V	Surface Mount	4V @ 230µA	480 nC @ 10 V	55 V	±20V	21620 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB10N03LB MOSFET N-CH 30V 50A TO263-3 Infineon Technologies	7,455	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	9.6mOhm @ 50A, 10V	Surface Mount	2V @ 20µA	13 nC @ 5 V	30 V	±20V	1639 pF @ 15 V	-	-	PG-TO263-3	-	58W (Tc)	-55°C ~ 175°C (TJ)
IPB14N03LA G MOSFET N-CH 25V 30A TO263-3 Infineon Technologies	5,390	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	13.6mOhm @ 30A, 10V	Surface Mount	2V @ 20µA	8.3 nC @ 5 V	25 V	±20V	1043 pF @ 15 V	-	-	PG-TO263-3-2	-	46W (Tc)	-55°C ~ 175°C (TJ)

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