Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 457

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB25N06S3-25 MOSFET N-CH 55V 25A TO263-3 Infineon Technologies	2,585	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	24.8mOhm @ 15A, 10V	Surface Mount	4V @ 20µA	41 nC @ 10 V	55 V	±20V	1862 pF @ 25 V	-	-	PG-TO263-3-2	-	48W (Tc)	-55°C ~ 175°C (TJ)
IPB45N06S3-16 MOSFET N-CH 55V 45A TO263-3 Infineon Technologies	2,754	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	15.4mOhm @ 23A, 10V	Surface Mount	4V @ 30µA	57 nC @ 10 V	55 V	±20V	2980 pF @ 25 V	-	-	PG-TO263-3-2	-	65W (Tc)	-55°C ~ 175°C (TJ)
IPB45N06S3L-13 MOSFET N-CH 55V 45A TO263-3 Infineon Technologies	4,018	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	5V, 10V	13.1mOhm @ 26A, 10V	Surface Mount	2.2V @ 30µA	75 nC @ 10 V	55 V	±16V	3600 pF @ 25 V	-	-	PG-TO263-3-2	-	65W (Tc)	-55°C ~ 175°C (TJ)
IPB77N06S3-09 MOSFET N-CH 55V 77A TO263-3 Infineon Technologies	9,826	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	10V	8.8mOhm @ 39A, 10V	Surface Mount	4V @ 55µA	103 nC @ 10 V	55 V	±20V	5335 pF @ 25 V	-	-	PG-TO263-3-2	-	107W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S3-07 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	3,078	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	6.5mOhm @ 51A, 10V	Surface Mount	4V @ 80µA	170 nC @ 10 V	55 V	±20V	7768 pF @ 25 V	-	-	PG-TO263-3-2	-	135W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S3L-05 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	7,914	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	5V, 10V	4.5mOhm @ 69A, 10V	Surface Mount	2.2V @ 115µA	273 nC @ 10 V	55 V	±16V	13060 pF @ 25 V	-	-	PG-TO263-3-2	-	165W (Tc)	-55°C ~ 175°C (TJ)
IPD05N03LB G MOSFET N-CH 30V 90A TO252-3 Infineon Technologies	4,336	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	4.8mOhm @ 60A, 10V	Surface Mount	2V @ 40µA	25 nC @ 5 V	30 V	±20V	3200 pF @ 15 V	-	-	PG-TO252-3-11	-	94W (Tc)	-55°C ~ 175°C (TJ)
IRF60B217 MOSFET N-CH 60V 60A TO220AB Infineon Technologies	7,642	-	询价单	数据表	StrongIRFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	6V, 10V	9mOhm @ 36A, 10V	Through Hole	3.7V @ 50µA	66 nC @ 10 V	60 V	±20V	2230 pF @ 25 V	-	-	TO-220AB	-	83W (Tc)	-55°C ~ 175°C (TJ)
IPA60R280P7XKSA1 MOSFET N-CH 600V 12A TO220 Infineon Technologies	6,858	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	280mOhm @ 3.8A, 10V	Through Hole	4V @ 190µA	18 nC @ 10 V	600 V	±20V	761 pF @ 400 V	-	-	PG-TO220-FP	-	24W (Tc)	-55°C ~ 150°C (TJ)
IPD09N03LB G MOSFET N-CH 30V 50A TO252-3 Infineon Technologies	3,937	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	9.1mOhm @ 50A, 10V	Surface Mount	2V @ 20µA	13 nC @ 5 V	30 V	±20V	1600 pF @ 15 V	-	-	PG-TO252-3-11	-	58W (Tc)	-55°C ~ 175°C (TJ)

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