Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 455

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSS225 MOSFET N-CH 600V 90MA SOT89 Infineon Technologies	7,346	-	询价单	数据表	SIPMOS®	TO-243AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90mA (Ta)	4.5V, 10V	45Ohm @ 90mA, 10V	Surface Mount	2.3V @ 94µA	5.8 nC @ 10 V	600 V	±20V	131 pF @ 25 V	-	-	PG-SOT89	-	1W (Ta)	-55°C ~ 150°C (TJ)
BSS225L6327HTSA1 MOSFET N-CH 600V 90MA SOT89 Infineon Technologies	4,904	-	询价单	数据表	SIPMOS®	TO-243AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90mA (Ta)	4.5V, 10V	45Ohm @ 90mA, 10V	Surface Mount	2.3V @ 94µA	5.8 nC @ 10 V	600 V	±20V	131 pF @ 25 V	-	-	PG-SOT89	-	1W (Ta)	-55°C ~ 150°C (TJ)
BSS7728N MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies	8,484	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	Surface Mount	2.3V @ 26µA	1.5 nC @ 10 V	60 V	±20V	56 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
ISP20EP10LMXTSA1 SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies	1,000	-	询价单	数据表	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	650mA (Ta), 990mA (Tc)	4.5V, 10V	2Ohm @ 600mA, 10V	Surface Mount	2V @ 78µA	3.5 nC @ 10 V	100 V	±20V	170 pF @ 50 V	-	-	PG-SOT223-4	-	1.8W (Ta), 4.2W (Tc)	-55°C ~ 150°C (TJ)
BSS87L6327HTSA1 MOSFET N-CH 240V 260MA SOT89 Infineon Technologies	9,709	-	询价单	数据表	SIPMOS®	TO-243AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	260mA (Ta)	4.5V, 10V	6Ohm @ 260mA, 10V	Surface Mount	1.8V @ 108µA	5.5 nC @ 10 V	240 V	±20V	97 pF @ 25 V	-	-	PG-SOT89	-	1W (Ta)	-55°C ~ 150°C (TJ)
BTS244ZNKSA1 MOSFET N-CH 55V 35A TO220-5-3 Infineon Technologies	5,093	-	询价单	数据表	TEMPFET®	TO-220-5 Formed Leads	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	13mOhm @ 19A, 10V	Through Hole	2V @ 130µA	130 nC @ 10 V	55 V	±20V	2660 pF @ 25 V	-	Temperature Sensing Diode	PG-TO220-5-3	-	170W (Tc)	-40°C ~ 175°C (TJ)
BTS282ZAKSA1 MOSFET N-CH 49V 80A TO220-7 Infineon Technologies	2,337	-	询价单	数据表	TEMPFET®	TO-220-7	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	6.5mOhm @ 36A, 10V	Through Hole	2V @ 240µA	232 nC @ 10 V	49 V	±20V	4800 pF @ 25 V	-	Temperature Sensing Diode	P-TO220-7-3	-	300W (Tc)	-40°C ~ 175°C (TJ)
BUZ31L E3044A MOSFET N-CH 200V 13.5A TO220-3 Infineon Technologies	2,407	-	询价单	数据表	SIPMOS®	TO-220-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13.5A (Tc)	5V	200mOhm @ 7A, 5V	Through Hole	2V @ 1mA	-	200 V	±20V	1600 pF @ 25 V	-	-	PG-TO220-3-1	-	95W (Tc)	-55°C ~ 150°C (TJ)
BUZ32H3045AATMA1 MOSFET N-CH 200V 9.5A TO263-3 Infineon Technologies	3,024	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.5A (Tc)	10V	400mOhm @ 6A, 10V	Surface Mount	4V @ 1mA	-	200 V	±20V	530 pF @ 25 V	-	-	PG-TO263-3-2	-	75W (Tc)	-55°C ~ 150°C (TJ)
IPB03N03LA MOSFET N-CH 25V 80A TO263-3 Infineon Technologies	5,901	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	2.7mOhm @ 55A, 10V	Surface Mount	2V @ 100µA	57 nC @ 5 V	25 V	±20V	7027 pF @ 15 V	-	-	PG-TO263-3-2	-	150W (Tc)	-55°C ~ 175°C (TJ)

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