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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP065N06LGAKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
7,789 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 80A, 10V | Through Hole | 2V @ 180µA | 157 nC @ 10 V | 60 V | ±20V | 5100 pF @ 30 V | - | - | PG-TO220-3-1 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP07N03LB GMOSFET N-CH 30V 50A TO220-3 Infineon Technologies |
7,970 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 6.6mOhm @ 50A, 10V | Through Hole | 2V @ 40µA | 25 nC @ 5 V | 30 V | ±20V | 2782 pF @ 15 V | - | - | PG-TO220-3-1 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP091N06N GMOSFET N-CHAN TO-220 Infineon Technologies |
6,484 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | - | 9.1mOhm @ 80A, 10V | Through Hole | 4V @ 130µA | 81 nC @ 10 V | 60 V | - | 2800 pF @ 30 V | - | - | PG-TO220-3 | - | - | - |
|
|
IPP100N06S3-03MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
6,509 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | Through Hole | 4V @ 230µA | 480 nC @ 10 V | 55 V | ±20V | 21620 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP100N06S3-04MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
3,095 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 4.4mOhm @ 80A, 10V | Through Hole | 4V @ 150µA | 314 nC @ 10 V | 55 V | ±20V | 14230 pF @ 25 V | - | - | PG-TO220-3-1 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP100N06S3L-03MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
9,946 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 5V, 10V | 3mOhm @ 80A, 10V | Through Hole | 2.2V @ 230µA | 550 nC @ 10 V | 55 V | ±16V | 26240 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP100N06S3L-04MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
6,448 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 5V, 10V | 3.8mOhm @ 80A, 10V | Through Hole | 2.2V @ 150µA | 362 nC @ 10 V | 55 V | ±16V | 17270 pF @ 25 V | - | - | PG-TO220-3-1 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP10N03LB GMOSFET N-CH 30V 50A TO220-3 Infineon Technologies |
8,403 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 9.9mOhm @ 50A, 10V | Through Hole | 2V @ 20µA | 13 nC @ 5 V | 30 V | ±20V | 1639 pF @ 15 V | - | - | PG-TO220-3-1 | - | 58W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP11N03LAMOSFET N-CH 25V 30A TO220-3 Infineon Technologies |
4,669 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 11.5mOhm @ 30A, 10V | Through Hole | 2V @ 20µA | 11 nC @ 5 V | 25 V | ±20V | 1358 pF @ 15 V | - | - | PG-TO220-3-1 | - | 52W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP120N06NGAKSA1MOSFET N-CH 60V 75A TO220-3 Infineon Technologies |
4,139 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 12mOhm @ 75A, 10V | Through Hole | 4V @ 94µA | 62 nC @ 10 V | 60 V | ±20V | 2100 pF @ 30 V | - | - | PG-TO220-3-1 | - | 158W (Tc) | -55°C ~ 175°C (TJ) |
