富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP12CNE8N G

IPP12CNE8N G

MOSFET N-CH 85V 67A TO220-3

Infineon Technologies

4,689 -
IPP12CNE8N G

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 67A (Tc) 10V 12.9mOhm @ 67A, 10V Through Hole 4V @ 83µA 64 nC @ 10 V 85 V ±20V 4340 pF @ 40 V - - PG-TO220-3 - 125W (Tc) -55°C ~ 175°C (TJ)
IPP13N03LB G

IPP13N03LB G

MOSFET N-CH 30V 30A TO220-3

Infineon Technologies

9,028 -
IPP13N03LB G

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 12.8mOhm @ 30A, 10V Through Hole 2V @ 20µA 10 nC @ 5 V 30 V ±20V 1355 pF @ 15 V - - PG-TO220-3-1 - 52W (Tc) -55°C ~ 175°C (TJ)
IPP16CNE8N G

IPP16CNE8N G

MOSFET N-CH 85V 53A TO220-3

Infineon Technologies

5,071 -
IPP16CNE8N G

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 53A (Tc) 10V 16.5mOhm @ 53A, 10V Through Hole 4V @ 61µA 48 nC @ 10 V 85 V ±20V 3230 pF @ 40 V - - PG-TO220-3 - 100W (Tc) -55°C ~ 175°C (TJ)
IPP21N03L G

IPP21N03L G

MOSFET N-CH TO-220

Infineon Technologies

4,274 -
IPP21N03L G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) - - - Through Hole - - - - - - - PG-TO220-3 - - -
IPP25N06S325XK

IPP25N06S325XK

MOSFET N-CH 55V 25A TO220-3

Infineon Technologies

4,156 -
IPP25N06S325XK

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 25.1mOhm @ 15A, 10V Through Hole 4V @ 20µA 41 nC @ 10 V 55 V ±20V 1862 pF @ 25 V - - PG-TO220-3-1 - 48W (Tc) -55°C ~ 175°C (TJ)
IPP25N06S3L-22

IPP25N06S3L-22

MOSFET N-CH 55V 25A TO220-3

Infineon Technologies

5,960 -
IPP25N06S3L-22

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 5V, 10V 21.6mOhm @ 17A, 10V Through Hole 2.2V @ 20µA 47 nC @ 10 V 55 V ±16V 2260 pF @ 25 V - - PG-TO220-3-1 - 50W (Tc) -55°C ~ 175°C (TJ)
IPP26CN10NGHKSA1

IPP26CN10NGHKSA1

MOSFET N-CH 100V 35A TO220-3

Infineon Technologies

7,330 -
IPP26CN10NGHKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 26mOhm @ 35A, 10V Through Hole 4V @ 39µA 31 nC @ 10 V 100 V ±20V 2070 pF @ 50 V - - PG-TO220-3 - 71W (Tc) -55°C ~ 175°C (TJ)
IPP26CNE8N G

IPP26CNE8N G

MOSFET N-CH 85V 35A TO220-3

Infineon Technologies

8,771 -
IPP26CNE8N G

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 26mOhm @ 35A, 10V Through Hole 4V @ 39µA 31 nC @ 10 V 85 V ±20V 2070 pF @ 40 V - - PG-TO220-3 - 71W (Tc) -55°C ~ 175°C (TJ)
IPP45N06S3L-13

IPP45N06S3L-13

MOSFET N-CH 55V 45A TO220-3

Infineon Technologies

3,866 -
IPP45N06S3L-13

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 45A (Tc) 5V, 10V 13.4mOhm @ 26A, 10V Through Hole 2.2V @ 30µA 75 nC @ 10 V 55 V ±16V 3600 pF @ 25 V - - PG-TO220-3-1 - 65W (Tc) -55°C ~ 175°C (TJ)
IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

MOSFET N-CH 100V 20A TO220-3

Infineon Technologies

7,016 -
IPP50CN10NGXKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 50mOhm @ 20A, 10V Through Hole 4V @ 20µA 16 nC @ 10 V 100 V ±20V 1090 pF @ 50 V - - PG-TO220-3 - 44W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户