Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 458

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD10N03LA MOSFET N-CH 25V 30A TO252-3 Infineon Technologies	4,679	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	10.4mOhm @ 30A, 10V	Surface Mount	2V @ 20µA	11 nC @ 5 V	25 V	±20V	1358 pF @ 15 V	-	-	PG-TO252-3-11	-	52W (Tc)	-55°C ~ 175°C (TJ)
IPD10N03LA G MOSFET N-CH 25V 30A TO252-3 Infineon Technologies	9,585	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	10.4mOhm @ 30A, 10V	Surface Mount	2V @ 20µA	11 nC @ 5 V	25 V	±20V	1358 pF @ 15 V	-	-	PG-TO252-3-11	-	52W (Tc)	-55°C ~ 175°C (TJ)
IPD20N03L MOSFET N-CH 30V 30A TO252-3 Infineon Technologies	7,887	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	20mOhm @ 15A, 10V	Surface Mount	2V @ 25µA	11 nC @ 5 V	30 V	±20V	700 pF @ 25 V	-	-	PG-TO252-3-11	-	60W (Tc)	-55°C ~ 175°C (TJ)
IPD20N03L G MOSFET N-CH 30V 30A TO252-3 Infineon Technologies	8,681	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	20mOhm @ 15A, 10V	Surface Mount	2V @ 25µA	19 nC @ 5 V	30 V	±20V	695 pF @ 25 V	-	-	PG-TO252-3	-	42W (Tc)	-55°C ~ 175°C (TJ)
IPD230N06NGBTMA1 MOSFET N-CH 60V 30A TO252-3 Infineon Technologies	9,743	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	23mOhm @ 30A, 10V	Surface Mount	4V @ 50µA	31 nC @ 10 V	60 V	±20V	1100 pF @ 30 V	-	-	PG-TO252-3	-	100W (Tc)	-55°C ~ 175°C (TJ)
IPD800N06NGBTMA1 MOSFET N-CH 60V 16A TO252-3 Infineon Technologies	4,675	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	80mOhm @ 16A, 10V	Surface Mount	4V @ 16µA	10 nC @ 10 V	60 V	±20V	370 pF @ 30 V	-	-	PG-TO252-3	-	47W (Tc)	-55°C ~ 175°C (TJ)
IPI06N03LA MOSFET N-CH 25V 50A TO262-3 Infineon Technologies	8,144	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	6.2mOhm @ 30A, 10V	Through Hole	2V @ 40µA	22 nC @ 5 V	25 V	±20V	2653 pF @ 15 V	-	-	PG-TO262-3	-	83W (Tc)	-55°C ~ 175°C (TJ)
IPI09N03LA MOSFET N-CH 25V 50A TO262-3 Infineon Technologies	8,696	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	9.2mOhm @ 30A, 10V	Through Hole	2V @ 20µA	13 nC @ 5 V	25 V	±20V	1642 pF @ 15 V	-	-	PG-TO262-3	-	63W (Tc)	-55°C ~ 175°C (TJ)
IPI25N06S3-25 MOSFET N-CH 55V 25A TO262-3 Infineon Technologies	9,049	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	25.1mOhm @ 15A, 10V	Through Hole	4V @ 20µA	41 nC @ 10 V	55 V	±20V	1862 pF @ 25 V	-	-	PG-TO262-3	-	48W (Tc)	-55°C ~ 175°C (TJ)
IPI25N06S3L-22 MOSFET N-CH 55V 25A TO262-3 Infineon Technologies	9,158	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	5V, 10V	21.6mOhm @ 17A, 10V	Through Hole	2.2V @ 20µA	47 nC @ 10 V	55 V	±16V	2260 pF @ 25 V	-	-	PG-TO262-3	-	50W (Tc)	-55°C ~ 175°C (TJ)

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