Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 453

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSP324 E6327 MOSFET N-CH 400V 170MA SOT223-4 Infineon Technologies	4,165	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	25Ohm @ 170mA, 10V	Surface Mount	2.3V @ 94µA	5.9 nC @ 10 V	400 V	±20V	154 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP324L6327HTSA1 MOSFET N-CH 400V 170MA SOT223-4 Infineon Technologies	4,569	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	25Ohm @ 170mA, 10V	Surface Mount	2.3V @ 94µA	5.9 nC @ 10 V	400 V	±20V	154 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP372 E6327 MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies	8,349	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Ta)	5V	310mOhm @ 1.7A, 5V	Surface Mount	2V @ 1mA	-	100 V	±14V	520 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP373 E6327 MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies	2,042	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Ta)	10V	300mOhm @ 1.7A, 10V	Surface Mount	4V @ 1mA	-	100 V	±20V	550 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP603S2LHUMA1 MOSFET N-CH 55V 5.2A SOT223-4 Infineon Technologies	7,161	-	询价单	数据表	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.2A (Ta)	4.5V, 10V	33mOhm @ 2.6A, 10V	Surface Mount	2V @ 50µA	42 nC @ 10 V	55 V	±20V	1390 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP613P MOSFET P-CH 60V 2.9A SOT223-4 Infineon Technologies	3,681	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.9A (Ta)	10V	130mOhm @ 2.9A, 10V	Surface Mount	4V @ 1mA	33 nC @ 10 V	60 V	±20V	875 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP613PL6327HUSA1 MOSFET P-CH 60V 2.9A SOT223-4 Infineon Technologies	2,921	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.9A (Ta)	10V	130mOhm @ 2.9A, 10V	Surface Mount	4V @ 1mA	33 nC @ 10 V	60 V	±20V	875 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP89 E6327 MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies	9,565	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	350mA (Ta)	4.5V, 10V	6Ohm @ 350mA, 10V	Surface Mount	1.8V @ 108µA	6.4 nC @ 10 V	240 V	±20V	140 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP89L6327HTSA1 MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies	5,062	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	350mA (Ta)	4.5V, 10V	6Ohm @ 350mA, 10V	Surface Mount	1.8V @ 108µA	6.4 nC @ 10 V	240 V	±20V	140 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP92PL6327HTSA1 MOSFET P-CH 250V 260MA SOT223-4 Infineon Technologies	2,616	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	260mA (Ta)	4.5V, 10V	12Ohm @ 260mA, 10V	Surface Mount	2V @ 130µA	5.4 nC @ 10 V	250 V	±20V	104 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)

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