Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 452

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSP296 E6433 MOSFET N-CH 100V 1.1A SOT223-4 Infineon Technologies	6,863	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.1A (Ta)	4.5V, 10V	700mOhm @ 1.1A, 10V	Surface Mount	1.8V @ 400µA	17.2 nC @ 10 V	100 V	±20V	364 pF @ 25 V	-	-	PG-SOT223-4	-	1.79W (Ta)	-55°C ~ 150°C (TJ)
BSP296L6433HTMA1 MOSFET N-CH 100V 1.1A SOT223-4 Infineon Technologies	9,825	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.1A (Ta)	4.5V, 10V	700mOhm @ 1.1A, 10V	Surface Mount	1.8V @ 400µA	17.2 nC @ 10 V	100 V	±20V	364 pF @ 25 V	-	-	PG-SOT223-4	-	1.79W (Ta)	-55°C ~ 150°C (TJ)
BSP297L6327HTSA1 MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies	2,537	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	660mA (Ta)	4.5V, 10V	1.8Ohm @ 660mA, 10V	Surface Mount	1.8V @ 400µA	16.1 nC @ 10 V	200 V	±20V	357 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP298 E6327 MOSFET N-CH 400V 500MA SOT223-4 Infineon Technologies	5,209	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	10V	3Ohm @ 500mA, 10V	Surface Mount	4V @ 1mA	-	400 V	±20V	400 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP298L6327HUSA1 MOSFET N-CH 400V 500MA SOT223-4 Infineon Technologies	8,436	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	10V	3Ohm @ 500mA, 10V	Surface Mount	4V @ 1mA	-	400 V	±20V	400 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP300L6327HUSA1 MOSFET N-CH 800V 190MA SOT223-4 Infineon Technologies	8,551	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	190mA (Ta)	10V	20Ohm @ 190mA, 10V	Surface Mount	4V @ 1mA	-	800 V	±20V	230 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP316PL6327HTSA1 MOSFET P-CH 100V 680MA SOT223-4 Infineon Technologies	7,451	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	680mA (Ta)	4.5V, 10V	1.8Ohm @ 680mA, 10V	Surface Mount	2V @ 170µA	6.4 nC @ 10 V	100 V	±20V	146 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP317PL6327HTSA1 MOSFET P-CH 250V 430MA SOT223-4 Infineon Technologies	9,599	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	430mA (Ta)	4.5V, 10V	4Ohm @ 430mA, 10V	Surface Mount	2V @ 370µA	15.1 nC @ 10 V	250 V	±20V	262 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP318S E6327 MOSFET N-CH 60V 2.6A SOT223-4 Infineon Technologies	7,643	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Ta)	4.5V, 10V	90mOhm @ 2.6A, 10V	Surface Mount	2V @ 20µA	20 nC @ 10 V	60 V	±20V	380 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP320S E6327 MOSFET N-CH 60V 2.9A SOT223-4 Infineon Technologies	7,419	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.9A (Ta)	10V	120mOhm @ 2.9A, 10V	Surface Mount	4V @ 20µA	12 nC @ 10 V	60 V	±20V	340 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)

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