Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 42

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP084N06L3GHKSA1 MOSFET N-CH 60V 50A TO220-3 Infineon Technologies	9,556	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	8.4mOhm @ 50A, 10V	Through Hole	2.2V @ 34µA	29 nC @ 4.5 V	60 V	±20V	4900 pF @ 30 V	-	-	PG-TO220-3	-	79W (Tc)	-55°C ~ 175°C (TJ)
AIMW120R060M1HXKSA1 1200V COOLSIC MOSFET PG-TO247-3 Infineon Technologies	220	-	询价单	数据表	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	36A (Tc)	18V	78mOhm @ 13A, 18V	Through Hole	5.7V @ 5.6mA	31 nC @ 18 V	1200 V	+23V, -7V	1060 pF @ 800 V	AEC-Q101	-	PG-TO247-3-41	Automotive	150W (Tc)	-55°C ~ 175°C (TJ)
IRFHM8329TRPBF MOSFET N-CH 30V 16A/57A PQFN Infineon Technologies	7,042	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 57A (Tc)	4.5V, 10V	6.1mOhm @ 20A, 10V	Surface Mount	2.2V @ 25µA	26 nC @ 10 V	30 V	±20V	1710 pF @ 10 V	-	-	PQFN (3x3)	-	2.6W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)
IPN50R950CEATMA1 MOSFET N-CH 500V 6.6A SOT223 Infineon Technologies	2,986	-	询价单	数据表	CoolMOS™ CE	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.6A (Tc)	13V	950mOhm @ 1.2A, 13V	Surface Mount	3.5V @ 100µA	10.5 nC @ 10 V	500 V	±20V	231 pF @ 100 V	-	-	PG-SOT223	-	5W (Tc)	-40°C ~ 150°C (TJ)
IPP034N03LGHKSA1 MOSFET N-CH 30V 80A TO220-3 Infineon Technologies	2,465	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.4mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	25 nC @ 4.5 V	30 V	±20V	5300 pF @ 15 V	-	-	PG-TO220-3-1	-	94W (Tc)	-55°C ~ 175°C (TJ)
IRL3714ZLPBF MOSFET N-CH 20V 36A TO262 Infineon Technologies	3,762	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	4.5V, 10V	16mOhm @ 15A, 10V	Through Hole	2.55V @ 250µA	7.2 nC @ 4.5 V	20 V	±20V	550 pF @ 10 V	-	-	TO-262	-	35W (Tc)	-55°C ~ 175°C (TJ)
BSB104N08NP3GXUSA1 MOSFET N-CH 80V 13A/50A 2WDSON Infineon Technologies	2,779	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 50A (Tc)	10V	10.4mOhm @ 10A, 10V	Surface Mount	3.5V @ 40µA	31 nC @ 10 V	80 V	±20V	2100 pF @ 40 V	-	-	MG-WDSON-2, CanPAK M™	-	2.8W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRF3704ZSTRRPBF MOSFET N-CH 20V 67A D2PAK Infineon Technologies	3,996	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	4.5V, 10V	7.9mOhm @ 21A, 10V	Surface Mount	2.55V @ 250µA	13 nC @ 4.5 V	20 V	±20V	1220 pF @ 10 V	-	-	D2PAK	-	57W (Tc)	-55°C ~ 175°C (TJ)
IRFR3303CPBF MOSFET N-CH 30V 33A DPAK Infineon Technologies	4,580	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	31mOhm @ 18A, 10V	Surface Mount	4V @ 250µA	29 nC @ 10 V	30 V	±20V	750 pF @ 25 V	-	-	TO-252AA (DPAK)	-	57W (Tc)	-55°C ~ 150°C (TJ)
IRFR5505CPBF MOSFET P-CH 55V 18A DPAK Infineon Technologies	8,912	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	110mOhm @ 9.6A, 10V	Surface Mount	4V @ 250µA	32 nC @ 10 V	55 V	±20V	650 pF @ 25 V	-	-	TO-252AA (DPAK)	-	57W (Tc)	-55°C ~ 150°C (TJ)

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