| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSP299 E6327MOSFET N-CH 500V 400MA SOT223-4 Infineon Technologies |
7,876 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | Surface Mount | 4V @ 1mA | - | 500 V | ±20V | 400 pF @ 25 V | - | - | PG-SOT223-4-21 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF200B211XKMA1TRENCH >=100V Infineon Technologies |
3,001 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 170mOhm @ 7.2A, 10V | Through Hole | 4.9V @ 50µA | 23 nC @ 10 V | 200 V | ±20V | 790 pF @ 50 V | - | - | PG-TO220-3-904 | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
|
SPD50N06S2L-13MOSFET N-CH 55V 50A TO252-3 Infineon Technologies |
3,113 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 34A, 10V | Surface Mount | 2V @ 80µA | 69 nC @ 10 V | 55 V | ±20V | 2300 pF @ 25 V | - | - | PG-TO252-3-11 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
BUZ73MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
2,481 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
IRL3714ZPBFMOSFET N-CH 20V 36A TO220AB Infineon Technologies |
5,203 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | Through Hole | 2.55V @ 250µA | 7.2 nC @ 4.5 V | 20 V | ±20V | 550 pF @ 10 V | - | - | TO-220AB | - | 35W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC052N03S GMOSFET N-CH 30V 18A/80A TDSON Infineon Technologies |
8,135 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Ta), 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 50A, 10V | Surface Mount | 2V @ 40µA | 22 nC @ 5 V | 30 V | ±20V | 2820 pF @ 15 V | - | - | PG-TDSON-8-6 | - | 2.8W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF7451PBFMOSFET N-CH 150V 3.6A 8SO Infineon Technologies |
4,882 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.6A (Ta) | 10V | 90mOhm @ 2.2A, 10V | Surface Mount | 5.5V @ 250µA | 41 nC @ 10 V | 150 V | ±30V | 990 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | - |
|
IRF9410TRPBFMOSFET N-CH 30V 7A 8SO Infineon Technologies |
4,614 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | Surface Mount | 1V @ 250µA | 27 nC @ 10 V | 30 V | ±20V | 550 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SPD07N20GBTMA1MOSFET N-CH 200V 7A TO252-3 Infineon Technologies |
4,084 | - |
|
数据表 |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | Surface Mount | 4V @ 1mA | 31.5 nC @ 10 V | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO252-3 | - | 40W (Tc) | -55°C ~ 175°C (TJ) |
|
BSO064N03SMOSFET N-CH 30V 12A 8DSO Infineon Technologies |
4,996 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 4.5V, 10V | 6.4mOhm @ 16A, 10V | Surface Mount | 2V @ 50µA | 28 nC @ 5 V | 30 V | ±20V | 3620 pF @ 15 V | - | - | PG-DSO-8 | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) |