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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSP299 E6327

BSP299 E6327

MOSFET N-CH 500V 400MA SOT223-4

Infineon Technologies

7,876 -
BSP299 E6327

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 400mA (Ta) 10V 4Ohm @ 400mA, 10V Surface Mount 4V @ 1mA - 500 V ±20V 400 pF @ 25 V - - PG-SOT223-4-21 - 1.8W (Ta) -55°C ~ 150°C (TJ)
IRF200B211XKMA1

IRF200B211XKMA1

TRENCH >=100V

Infineon Technologies

3,001 -
IRF200B211XKMA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 170mOhm @ 7.2A, 10V Through Hole 4.9V @ 50µA 23 nC @ 10 V 200 V ±20V 790 pF @ 50 V - - PG-TO220-3-904 - 80W (Tc) -55°C ~ 175°C (TJ)
SPD50N06S2L-13

SPD50N06S2L-13

MOSFET N-CH 55V 50A TO252-3

Infineon Technologies

3,113 -
SPD50N06S2L-13

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 12.7mOhm @ 34A, 10V Surface Mount 2V @ 80µA 69 nC @ 10 V 55 V ±20V 2300 pF @ 25 V - - PG-TO252-3-11 - 136W (Tc) -55°C ~ 175°C (TJ)
BUZ73

BUZ73

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies

2,481 -
BUZ73

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 400mOhm @ 4.5A, 10V Through Hole 4V @ 1mA - 200 V ±20V 530 pF @ 25 V - - PG-TO220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
IRL3714ZPBF

IRL3714ZPBF

MOSFET N-CH 20V 36A TO220AB

Infineon Technologies

5,203 -
IRL3714ZPBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V Through Hole 2.55V @ 250µA 7.2 nC @ 4.5 V 20 V ±20V 550 pF @ 10 V - - TO-220AB - 35W (Tc) -55°C ~ 175°C (TJ)
BSC052N03S G

BSC052N03S G

MOSFET N-CH 30V 18A/80A TDSON

Infineon Technologies

8,135 -
BSC052N03S G

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta), 80A (Tc) 4.5V, 10V 5.2mOhm @ 50A, 10V Surface Mount 2V @ 40µA 22 nC @ 5 V 30 V ±20V 2820 pF @ 15 V - - PG-TDSON-8-6 - 2.8W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
IRF7451PBF

IRF7451PBF

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies

4,882 -
IRF7451PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V Surface Mount 5.5V @ 250µA 41 nC @ 10 V 150 V ±30V 990 pF @ 25 V - - 8-SO - 2.5W (Ta) -
IRF9410TRPBF

IRF9410TRPBF

MOSFET N-CH 30V 7A 8SO

Infineon Technologies

4,614 -
IRF9410TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 30mOhm @ 7A, 10V Surface Mount 1V @ 250µA 27 nC @ 10 V 30 V ±20V 550 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SPD07N20GBTMA1

SPD07N20GBTMA1

MOSFET N-CH 200V 7A TO252-3

Infineon Technologies

4,084 -
SPD07N20GBTMA1

数据表

SIPMOS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 400mOhm @ 4.5A, 10V Surface Mount 4V @ 1mA 31.5 nC @ 10 V 200 V ±20V 530 pF @ 25 V - - PG-TO252-3 - 40W (Tc) -55°C ~ 175°C (TJ)
BSO064N03S

BSO064N03S

MOSFET N-CH 30V 12A 8DSO

Infineon Technologies

4,996 -
BSO064N03S

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 6.4mOhm @ 16A, 10V Surface Mount 2V @ 50µA 28 nC @ 5 V 30 V ±20V 3620 pF @ 15 V - - PG-DSO-8 - 1.56W (Ta) -55°C ~ 150°C (TJ)
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