Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 45

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSF077N06NT3GXUMA1 MOSFET N-CH 60V 13A/56A 2WDSON Infineon Technologies	9,540	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 56A (Tc)	10V	7.7mOhm @ 30A, 10V	Surface Mount	4V @ 33µA	46 nC @ 10 V	60 V	±20V	3700 pF @ 30 V	-	-	MG-WDSON-2, CanPAK M™	-	2.2W (Ta), 38W (Tc)	-40°C ~ 150°C (TJ)
IRFZ44EPBF MOSFET N-CH 60V 48A TO220AB Infineon Technologies	3,393	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	48A (Tc)	10V	23mOhm @ 29A, 10V	Through Hole	4V @ 250µA	60 nC @ 10 V	60 V	±20V	1360 pF @ 25 V	-	-	TO-220AB	-	110W (Tc)	-55°C ~ 175°C (TJ)
BSL207SPL6327HTSA1 MOSFET P-CH 20V 6A TSOP-6 Infineon Technologies	6,018	-	询价单	数据表	OptiMOS™	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	6A (Ta)	2.5V, 4.5V	41mOhm @ 6A, 4.5V	Surface Mount	1.2V @ 40µA	20 nC @ 4.5 V	20 V	±12V	1007 pF @ 15 V	-	-	PG-TSOP6-6	-	2W (Ta)	-55°C ~ 150°C (TJ)
BSP315PL6327HTSA1 MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies	4,377	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.17A (Ta)	4.5V, 10V	800mOhm @ 1.17A, 10V	Surface Mount	2V @ 160µA	7.8 nC @ 10 V	60 V	±20V	160 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSZ105N04NSGATMA1 MOSFET N-CH 40V 11A/40A 8TSDSON Infineon Technologies	2,657	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 40A (Tc)	10V	10.5mOhm @ 20A, 10V	Surface Mount	4V @ 14µA	17 nC @ 10 V	40 V	±20V	1300 pF @ 20 V	-	-	PG-TSDSON-8	-	2.1W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)
IRFHM8342TRPBF MOSFET N-CH 30V 10A 8PQFN Infineon Technologies	6,721	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	16mOhm @ 17A, 10V	Surface Mount	2.35V @ 25µA	7.5 nC @ 4.5 V	30 V	±20V	560 pF @ 25 V	-	-	8-PQFN (3.3x3.3), Power33	-	2.6W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)
IAUC120N06S5N022ATMA1 MOSFET_)40V 60V) Infineon Technologies	5,183	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	170A (Tj)	7V, 10V	2.24mOhm @ 60A, 10V	Surface Mount	3.4V @ 65µA	68 nC @ 10 V	60 V	±20V	4930 pF @ 30 V	-	-	PG-TDSON-8-34	-	136W (Tc)	-55°C ~ 175°C (TJ)
IRFZ46NLPBF MOSFET N-CH 55V 53A TO262 Infineon Technologies	8,985	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	53A (Tc)	10V	16.5mOhm @ 28A, 10V	Through Hole	4V @ 250µA	72 nC @ 10 V	55 V	±20V	1696 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)
IAUC100N10S5L054ATMA1 MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies	3,375	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	101A (Tj)	4.5V, 10V	5.4mOhm @ 50A, 10V	Surface Mount	2.2V @ 64µA	53 nC @ 10 V	100 V	±20V	3744 pF @ 50 V	-	-	PG-TDSON-8-34	-	130W (Tc)	-55°C ~ 175°C (TJ)
SPP04N50C3HKSA1 MOSFET N-CH 560V 4.5A TO220-3 Infineon Technologies	5,718	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	950mOhm @ 2.8A, 10V	Through Hole	3.9V @ 200µA	22 nC @ 10 V	560 V	±20V	470 pF @ 25 V	-	-	PG-TO220-3-1	-	50W (Tc)	-55°C ~ 150°C (TJ)

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