Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 40

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFH8330TRPBF MOSFET N-CH 30V 17A/56A PQFN Infineon Technologies	4,538	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Ta), 56A (Tc)	4.5V, 10V	6.6mOhm @ 20A, 10V	Surface Mount	2.35V @ 25µA	20 nC @ 10 V	30 V	±20V	1450 pF @ 25 V	-	-	PQFN (5x6)	-	3.3W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)
IRFHM8337TRPBF MOSFET N-CH 30V 12A 8PQFN Infineon Technologies	8,047	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	4.5V, 10V	12.4mOhm @ 12A, 10V	Surface Mount	2.35V @ 25µA	8.1 nC @ 4.5 V	30 V	±20V	755 pF @ 15 V	-	-	8-PQFN (3.3x3.3), Power33	-	2.8W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
SPD04N60S5 MOSFET N-CH 600V 4.5A TO252-3 Infineon Technologies	4,651	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	950mOhm @ 2.8A, 10V	Surface Mount	5.5V @ 200µA	22.9 nC @ 10 V	600 V	±20V	580 pF @ 25 V	-	-	PG-TO252-3-11	-	50W (Tc)	-55°C ~ 150°C (TJ)
SPP10N10 MOSFET N-CH 100V 10.3A TO220-3 Infineon Technologies	2,041	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.3A (Tc)	10V	170mOhm @ 7.8A, 10V	Through Hole	4V @ 21µA	19.4 nC @ 10 V	100 V	±20V	426 pF @ 25 V	-	-	PG-TO220-3-1	-	50W (Tc)	-55°C ~ 175°C (TJ)
IMZA65R030M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	144	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	53A (Tc)	18V	42mOhm @ 29.5A, 18V	Through Hole	5.7V @ 8.8mA	48 nC @ 18 V	650 V	+20V, -2V	1643 pF @ 400 V	-	-	PG-TO247-4-3	-	197W (Tc)	-55°C ~ 175°C (TJ)
BUZ73AL MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies	2,238	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	5V	600mOhm @ 3.5A, 5V	Through Hole	2V @ 1mA	-	200 V	±20V	840 pF @ 25 V	-	-	PG-TO220-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
IPD60R180P7SE8228AUMA1 MOSFET N-CH 600V 18A TO252-3 Infineon Technologies	4,103	-	询价单	数据表	CoolMOS™ P7	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	180mOhm @ 5.6A, 10V	Surface Mount	4V @ 280µA	25 nC @ 10 V	600 V	±20V	1081 pF @ 400 V	-	-	PG-TO252-3	-	72W (Tc)	-40°C ~ 150°C (TJ)
IPAW60R360P7SE8228XKSA1 MOSFET N-CH 600V 9A TO220 Infineon Technologies	9,672	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	360mOhm @ 2.7A, 10V	Through Hole	4V @ 140µA	13 nC @ 10 V	600 V	±20V	555 pF @ 400 V	-	-	PG-TO220-FP	-	22W (Tc)	-40°C ~ 150°C (TJ)
IPD06P003NATMA1 MOSFET P-CH 60V 22A TO252-3 Infineon Technologies	4,870	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	65mOhm @ 22A, 10V	Surface Mount	4V @ 1.04mA	39 nC @ 10 V	60 V	±20V	1600 pF @ 30 V	-	-	PG-TO252-3	-	83W (Tc)	-55°C ~ 175°C (TJ)
SPN04N60S5 MOSFET N-CH 600V 800MA SOT223-4 Infineon Technologies	3,340	-	询价单	数据表	CoolMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	800mA (Ta)	10V	950mOhm @ 2.8A, 10V	Surface Mount	5.5V @ 200µA	17 nC @ 10 V	600 V	±20V	600 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)

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