Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 38

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP055N03LGXKSA1 MOSFET N-CH 30V 50A TO220-3 Infineon Technologies	4,105	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	5.5mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	31 nC @ 10 V	30 V	±20V	3200 pF @ 15 V	-	-	PG-TO220-3	-	68W (Tc)	-55°C ~ 175°C (TJ)
IMZA65R057M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	150	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	35A (Tc)	18V	74mOhm @ 16.7A, 18V	Through Hole	5.7V @ 5mA	28 nC @ 18 V	650 V	+20V, -2V	930 pF @ 400 V	-	-	PG-TO247-4-3	-	133W (Tc)	-55°C ~ 175°C (TJ)
IRFB4020PBFXKMA1 TRENCH >=100V Infineon Technologies	4,390	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	100mOhm @ 11A, 10V	Through Hole	4.9V @ 100µA	29 nC @ 10 V	200 V	±20V	1200 pF @ 50 V	-	-	PG-TO220-3-904	-	100W (Tc)	-55°C ~ 175°C (TJ)
IPL65R1K0C6SATMA1 MOSFET N-CH 650V 4.2A THIN-PAK Infineon Technologies	6,254	-	询价单	数据表	CoolMOS™ C6	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.2A (Tc)	10V	1Ohm @ 1.5A, 10V	Surface Mount	3.5V @ 150µA	15 nC @ 10 V	650 V	±20V	328 pF @ 100 V	-	-	PG-TSON-8-2	-	34.7W (Tc)	-40°C ~ 150°C (TJ)
AUIRFP4568-E MOSFET N-CH 150V 171A TO247AD Infineon Technologies	355	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	171A (Tc)	10V	5.9mOhm @ 103A, 10V	Through Hole	5V @ 250µA	227 nC @ 10 V	150 V	±30V	10470 pF @ 50 V	-	-	TO-247AD	-	517W (Tc)	-55°C ~ 175°C (TJ)
IPW60R075CPFKSA1 MOSFET N-CH 650V 39A TO247-3 Infineon Technologies	237	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	10V	75mOhm @ 26A, 10V	Through Hole	3.5V @ 1.7mA	116 nC @ 10 V	650 V	±20V	4000 pF @ 100 V	-	-	PG-TO247-3-1	-	313W (Tc)	-55°C ~ 150°C (TJ)
AUIRFP4568 MOSFET N-CH 150V 171A TO247AC Infineon Technologies	386	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	171A (Tc)	10V	5.9mOhm @ 103A, 10V	Through Hole	5V @ 250µA	227 nC @ 10 V	150 V	±30V	10470 pF @ 50 V	-	-	TO-247AC	-	517W (Tc)	-55°C ~ 175°C (TJ)
IRLR8729TRPBF MOSFET N-CH 30V 58A DPAK Infineon Technologies	8,883	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	4.5V, 10V	8.9mOhm @ 25A, 10V	Surface Mount	2.35V @ 25µA	16 nC @ 4.5 V	30 V	±20V	1350 pF @ 15 V	-	-	TO-252AA (DPAK)	-	55W (Tc)	-55°C ~ 175°C (TJ)
BSL302SNH6327XTSA1 MOSFET N-CH 30V 7.1A TSOP-6 Infineon Technologies	5,850	-	询价单	数据表	OptiMOS™	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.1A (Ta)	4.5V, 10V	25mOhm @ 7.1A, 10V	Surface Mount	2V @ 30µA	6.6 nC @ 5 V	30 V	±20V	750 pF @ 15 V	-	-	PG-TSOP6-6	-	2W (Ta)	-55°C ~ 150°C (TJ)
IPZA60R037P7XKSA1 MOSFET N-CH 600V 76A TO247-4 Infineon Technologies	194	-	询价单	数据表	CoolMOS™ P7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	76A (Tc)	10V	37mOhm @ 29.5A, 10V	Through Hole	4V @ 1.48mA	121 nC @ 10 V	600 V	±20V	5243 pF @ 400 V	-	-	PG-TO247-4	-	255W (Tc)	-55°C ~ 150°C (TJ)

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