Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 39

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SPD30N06S2L-13 MOSFET N-CH 55V 30A TO252-3 Infineon Technologies	9,180	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	13mOhm @ 30A, 10V	Surface Mount	2V @ 80µA	69 nC @ 10 V	55 V	±20V	2300 pF @ 25 V	-	-	PG-TO252-3-11	-	136W (Tc)	-55°C ~ 175°C (TJ)
IPDQ60R022S7XTMA1 HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies	738	-	询价单	数据表	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	12V	22mOhm @ 23A, 12V	Surface Mount	4.5V @ 1.44mA	150 nC @ 12 V	600 V	±20V	5639 pF @ 300 V	-	-	PG-HDSOP-22-1	-	416W (Tc)	-55°C ~ 150°C (TJ)
IPS80R900P7AKMA1 MOSFET N-CH 800V 6A TO251-3 Infineon Technologies	2,973	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	900mOhm @ 2.2A, 10V	Through Hole	3.5V @ 110µA	15 nC @ 10 V	800 V	±20V	350 pF @ 500 V	-	-	PG-TO251-3	-	45W (Tc)	-55°C ~ 150°C (TJ)
IRFR9120NCPBF MOSFET P-CH 100V 6.6A DPAK Infineon Technologies	6,770	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.6A (Ta)	10V	480mOhm @ 3.9A, 10V	Surface Mount	4V @ 250µA	27 nC @ 10 V	100 V	±20V	350 pF @ 25 V	-	-	TO-252AA (DPAK)	-	-	-55°C ~ 150°C (TJ)
IRFR5505TRR MOSFET P-CH 55V 18A DPAK Infineon Technologies	8,759	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	110mOhm @ 9.6A, 10V	Surface Mount	4V @ 250µA	32 nC @ 10 V	55 V	±20V	650 pF @ 25 V	-	-	TO-252AA (DPAK)	-	57W (Tc)	-55°C ~ 150°C (TJ)
IRF40H210 MOSFET N-CH 40V 100A 8PQFN Infineon Technologies	3,956	-	询价单	数据表	HEXFET®, StrongIRFET™	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	1.7mOhm @ 100A, 10V	Surface Mount	3.7V @ 150µA	152 nC @ 10 V	40 V	±20V	5406 pF @ 25 V	-	-	8-PQFN (5x6)	-	125W (Tc)	-55°C ~ 150°C (TJ)
IPB06N03LB MOSFET N-CH 30V 50A D2PAK Infineon Technologies	9,115	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	6.3mOhm @ 50A, 10V	Surface Mount	2V @ 40µA	22 nC @ 5 V	30 V	±20V	2782 pF @ 15 V	-	-	PG-TO263-3	-	83W (Tc)	-55°C ~ 175°C (TJ)
IRFB5615PBFXKMA1 MOSFET N-CH Infineon Technologies	8,267	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	39mOhm @ 21A, 10V	Through Hole	5V @ 100µA	40 nC @ 10 V	150 V	±20V	1750 pF @ 50 V	-	-	TO-220AB	-	144W (Tc)	-55°C ~ 175°C (TJ)
IRF7524D1TRPBF MOSFET P-CH 20V 1.7A MICRO8 Infineon Technologies	5,447	-	询价单	数据表	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.7A (Ta)	2.7V, 4.5V	270mOhm @ 1.2A, 4.5V	Surface Mount	700mV @ 250µA (Min)	8.2 nC @ 4.5 V	20 V	±12V	240 pF @ 15 V	-	Schottky Diode (Isolated)	Micro8™	-	1.25W (Ta)	-55°C ~ 150°C (TJ)
IPD60R3K3C6 MOSFET N-CH 600V 1.7A TO252-3 Infineon Technologies	2,532	-	询价单	数据表	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	3.3Ohm @ 500mA, 10V	Surface Mount	3.5V @ 40µA	4.6 nC @ 10 V	600 V	±20V	93 pF @ 100 V	-	-	PG-TO252-3	-	18.1W (Tc)	-55°C ~ 150°C (TJ)

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