Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 41

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSO220N03MSGXUMA1 MOSFET N-CH 30V 7A 8DSO Infineon Technologies	6,192	-	询价单	数据表	OptiMOS™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	22mOhm @ 8.6A, 10V	Surface Mount	2.1V @ 250µA	10.4 nC @ 10 V	30 V	±20V	800 pF @ 15 V	-	-	PG-DSO-8	-	1.56W (Ta)	-55°C ~ 150°C (TJ)
BSP716NH6327XTSA1 MOSFET N-CH 75V 2.3A SOT223-4 Infineon Technologies	6,500	-	询价单	数据表	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.3A (Ta)	4.5V, 10V	160mOhm @ 2.3A, 10V	Surface Mount	1.8V @ 218µA	13.1 nC @ 10 V	75 V	±20V	315 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IPZA65R018CFD7XKSA1 HIGH POWER_NEW Infineon Technologies	238	-	询价单	数据表	CoolMOS™ CFD7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	106A (Tc)	10V	18mOhm @ 58.2A, 10V	Through Hole	4.5V @ 2.91mA	234 nC @ 10 V	650 V	±20V	11660 pF @ 400 V	-	-	PG-TO247-4-3	-	446W (Tc)	-55°C ~ 150°C (TJ)
IRLR7807ZCPBF MOSFET N-CH 30V 43A DPAK Infineon Technologies	3,271	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	4.5V, 10V	13.8mOhm @ 15A, 10V	Surface Mount	2.25V @ 250µA	11 nC @ 4.5 V	30 V	±20V	780 pF @ 15 V	-	-	TO-252AA (DPAK)	-	40W (Tc)	-55°C ~ 175°C (TJ)
IRFR3707ZCTRLP MOSFET N-CH 30V 56A DPAK Infineon Technologies	3,650	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	4.5V, 10V	9.5mOhm @ 15A, 10V	Surface Mount	2.25V @ 25µA	14 nC @ 4.5 V	30 V	±20V	1150 pF @ 15 V	-	-	TO-252AA (DPAK)	-	50W (Tc)	-55°C ~ 175°C (TJ)
SPP10N10L MOSFET N-CH 100V 10.3A TO220-3 Infineon Technologies	6,435	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.3A (Tc)	4.5V, 10V	154mOhm @ 8.1A, 10V	Through Hole	2V @ 21µA	22 nC @ 10 V	100 V	±20V	444 pF @ 25 V	-	-	PG-TO220-3-1	-	50W (Tc)	-55°C ~ 175°C (TJ)
IPU95R1K2P7AKMA1 MOSFET N-CH 950V 6A TO251-3 Infineon Technologies	3,229	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	1.2Ohm @ 2.7A, 10V	Through Hole	3.5V @ 140µA	15 nC @ 10 V	950 V	±20V	478 pF @ 400 V	-	-	PG-TO251-3	-	52W (Tc)	-55°C ~ 150°C (TJ)
IPU80R750P7AKMA1 MOSFET N-CH 800V 7A TO251-3 Infineon Technologies	2,838	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	750mOhm @ 2.7A, 10V	Through Hole	3.5V @ 140µA	17 nC @ 10 V	800 V	±20V	460 pF @ 500 V	-	-	PG-TO251-3	-	51W (Tc)	-55°C ~ 150°C (TJ)
IPAN70R450P7SXKSA1 MOSFET N-CH 700V 10A TO220 Infineon Technologies	8,995	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	450mOhm @ 2.3A, 10V	Through Hole	3.5V @ 120µA	13.1 nC @ 10 V	700 V	±16V	424 pF @ 400 V	-	-	PG-TO220-FP	-	22.7W (Tc)	-40°C ~ 150°C (TJ)
IRF9Z24NLPBF MOSFET P-CH 55V 12A TO262 Infineon Technologies	3,476	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	175mOhm @ 7.2A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	55 V	±20V	350 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)

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