Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 44

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRLZ24NLPBF MOSFET N-CH 55V 18A TO262 Infineon Technologies	3,327	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4V, 10V	60mOhm @ 11A, 10V	Through Hole	2V @ 250µA	15 nC @ 5 V	55 V	±16V	480 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
BSC085N025S G MOSFET N-CH 25V 14A/35A TDSON Infineon Technologies	3,691	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Ta), 35A (Tc)	4.5V, 10V	8.5mOhm @ 35A, 10V	Surface Mount	2V @ 25µA	14 nC @ 5 V	25 V	±20V	1800 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
IRLMS2002 MOSFET N-CH 20V 6.5A MICRO6 Infineon Technologies	6,476	-	询价单	数据表	HEXFET®	SOT-23-6	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.5A (Ta)	2.5V, 4.5V	30mOhm @ 6.5A, 4.5V	Surface Mount	1.2V @ 250µA	22 nC @ 5 V	20 V	±12V	1310 pF @ 15 V	-	-	Micro6™(SOT23-6)	-	2W (Ta)	-
IRFR220NCPBF MOSFET N-CH 200V 5A DPAK Infineon Technologies	3,103	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	600mOhm @ 2.9A, 10V	Surface Mount	4V @ 250µA	23 nC @ 10 V	200 V	±20V	300 pF @ 25 V	-	-	TO-252AA (DPAK)	-	43W (Tc)	-55°C ~ 175°C (TJ)
IPD12CNE8N G MOSFET N-CH 85V 67A TO252-3 Infineon Technologies	4,576	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	12.4mOhm @ 67A, 10V	Surface Mount	4V @ 83µA	64 nC @ 10 V	85 V	±20V	4340 pF @ 40 V	-	-	PG-TO252-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
IPP60R600P7XKSA1 MOSFET N-CH 650V 6A TO220-3 Infineon Technologies	8,861	-	询价单	数据表	CoolMOS™ P7	TO-220-3	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	600mOhm @ 1.7A, 10V	Through Hole	4V @ 80µA	9 nC @ 10 V	650 V	±20V	363 pF @ 400 V	-	-	PG-TO220-3	-	30W (Tc)	-55°C ~ 150°C (TJ)
IPI80CN10N G MOSFET N-CH 100V 13A TO262-3 Infineon Technologies	2,348	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	80mOhm @ 13A, 10V	Through Hole	4V @ 12µA	11 nC @ 10 V	100 V	±20V	716 pF @ 50 V	-	-	PG-TO262-3	-	31W (Tc)	-55°C ~ 175°C (TJ)
SPD30N08S2L-21 MOSFET N-CH 75V 30A TO252-3 Infineon Technologies	7,155	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	20.5mOhm @ 25A, 10V	Surface Mount	2V @ 80µA	72 nC @ 10 V	75 V	±20V	2130 pF @ 25 V	-	-	PG-TO252-3-11	-	136W (Tc)	-55°C ~ 175°C (TJ)
IPF05N03LA G MOSFET N-CH 25V 50A TO252-3 Infineon Technologies	6,102	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	5.1mOhm @ 30A, 10V	Surface Mount	2V @ 50µA	25 nC @ 5 V	25 V	±20V	3110 pF @ 15 V	-	-	PG-TO252-3-23	-	94W (Tc)	-55°C ~ 175°C (TJ)
BSD214SNH6327XTSA1 MOSFET N-CH 20V 1.5A SOT363-6 Infineon Technologies	14,492	-	询价单	数据表	OptiMOS™	6-VSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta)	2.5V, 4.5V	140mOhm @ 1.5A, 4.5V	Surface Mount	1.2V @ 3.7µA	0.8 nC @ 5 V	20 V	±12V	143 pF @ 10 V	-	-	PG-SOT363-PO	-	500mW (Ta)	-55°C ~ 150°C (TJ)

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